@inproceedings{c9e335c7d1d64bafb59785b5f14726d1,
title = "A technology path for scaling embedded FeRAM to 28nm with 2T1C structure",
abstract = "Hf0.5Zr0.5O2 (HZO) ferroelectric random access memory (FeRAM) has been demonstrated in 130nm node with 1T1C structure. To scale FeRAM to 28nm or beyond, a high-aspect ratio embedded DRAM-like 3D cylinder capacitor is expected to ensure sufficient cell capacitance and sense margin. In this work, we investigate an alternative approach with 2T1C structure that takes advantages of a back-end-of-line (BEOL) oxide channel writing transistor, a small planar ferroelectric capacitor, and a silicon logic reading transistor. Firstly, the proof-of-concept of 2T1C bit cell was experimentally demonstrated. Then, the scalability towards 28nm was simulated with array-level parasitics. Thanks to the transconductance reading out mechanism, a 784 nm2 ferroelectric capacitor in 2T1C could significantly reduce energy consumption 6.5-11× compared to the traditional 1T1C FeRAM with similar cell area at 28nm.",
keywords = "BEOL, FeRAM, ferroelectrics, HZO, NVM",
author = "Jae Hur and Luo, {Yuan Chun} and Zheng Wang and Wonbo Shim and Khan, {Asif Islam} and Shimeng Yu",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Memory Workshop, IMW 2021 ; Conference date: 16-05-2021 Through 19-05-2021",
year = "2021",
month = may,
doi = "10.1109/IMW51353.2021.9439624",
language = "English",
series = "2021 IEEE International Memory Workshop, IMW 2021 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 IEEE International Memory Workshop, IMW 2021 - Proceedings",
}