A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory

Kirchhoff's law was used to examine the electrical specifications of selection diodes, which are essential for suppressing the read interference problems in nano-scale resistive switching cross bar arrays with a high block density. The diode in the cross bar array with a 100 Mb block density should have a reverse/forward resistance ratio of >10⁸ and a forward current density of >10⁵ A cm^-2 for stable reading and writing operation. Whilst normal circuit simulators are heavily overloaded when the number of cells (m) connected to one bit and word line is larger (m ≫ 100), which is the desired range for high density cross bar arrays, the present model can provide a simple simulation. The validity of this new method was confirmed by a comparison with the previously reported method based on a voltage estimation.