@inproceedings{193407bed9114c58a85ed24a91a32732,
title = "Accurate Effective Width Extraction Methods for Sub-10nm Multi-Gate MOSFETs through Capacitance Measurement",
abstract = "In this brief, methods to extract the effective width through gate to source /drain capacitance in Fin/GAA nMOS are presented. With a long channel (i.e. Lg > 100nm), the planar and various multi-gate devices are simulated and compared using the simple concept that the difference between the inversion capacitance of planar and other devices is proportional to the effective width. These methods are simple but powerful tool for monitoring the within-wafer-variation of Fin/GAA(Gate-All-Around)'s effective width using electrical parameters.",
keywords = "Effective width, Extraction Methods, FinFET, GAAFET, Inversion capacitance, Multi-gate FET, Within Wafer variations",
author = "Soyoun Kim and Sihyun Kim and Kitae Lee and Munhyeon Kim and Ryoongbin Lee and Sangwan Kim and Park, \{Byung Gook\}",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",
year = "2019",
month = mar,
doi = "10.1109/EDTM.2019.8731247",
language = "English",
series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "115--117",
booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
}