Abstract
We have demonstrated that it is important to control the carrier density in the channel region formed between an insulator and an organic semiconductor when preparing high-performance organic thin-film transistors (OTFTs). To clearly understand these effects, the surface roughness and surface energy of the insulator and the crystal structure were uniformly controlled. As the carrier density was controlled by adjusting the content of hydroxyl groups, the charge mobility was increased by 400%.
Original language | English |
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Article number | 133197 |
Journal | Materials Letters |
Volume | 329 |
DOIs | |
State | Published - 15 Dec 2022 |
Keywords
- High mobility
- Interface
- Trapping density