TY - JOUR
T1 - Advanced Accelerated Power Cycling Test for Reliability Investigation of Power Device Modules
AU - Choi, Ui Min
AU - Jorgensen, Soren
AU - Blaabjerg, Frede
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/12
Y1 - 2016/12
N2 - This paper presents an apparatus and methodology for an advanced accelerated power cycling test of insulated-gate bipolar transistor (IGBT) modules. In this test, the accelerated power cycling test can be performed under more realistic electrical operating conditions with online wear-out monitoring of tested power IGBT module. The various realistic electrical operating conditions close to real three-phase converter applications can be achieved by the simple control method. Further, by the proposed concept of applying the temperature stress, it is possible to apply various magnitudes of temperature swing in a short cycle period and to change the temperature cycle period easily. Thanks to a short temperature cycle period, test results can be obtained in a reasonable test time. A detailed explanation of apparatus such as configuration and control methods for the different functions of accelerated power cycling test setup is given. Then, an improved in situ junction temperature estimation method using on-state collector-emitter voltage VCEON and load current is proposed. In addition, a procedure of advanced accelerated power cycling test and test results with 600 V, 30 A transfer molded IGBT modules are presented in order to verify the validity and effectiveness of the proposed apparatus and methodology. Finally, physics-of-failure analysis of tested IGBT modules is provided.
AB - This paper presents an apparatus and methodology for an advanced accelerated power cycling test of insulated-gate bipolar transistor (IGBT) modules. In this test, the accelerated power cycling test can be performed under more realistic electrical operating conditions with online wear-out monitoring of tested power IGBT module. The various realistic electrical operating conditions close to real three-phase converter applications can be achieved by the simple control method. Further, by the proposed concept of applying the temperature stress, it is possible to apply various magnitudes of temperature swing in a short cycle period and to change the temperature cycle period easily. Thanks to a short temperature cycle period, test results can be obtained in a reasonable test time. A detailed explanation of apparatus such as configuration and control methods for the different functions of accelerated power cycling test setup is given. Then, an improved in situ junction temperature estimation method using on-state collector-emitter voltage VCEON and load current is proposed. In addition, a procedure of advanced accelerated power cycling test and test results with 600 V, 30 A transfer molded IGBT modules are presented in order to verify the validity and effectiveness of the proposed apparatus and methodology. Finally, physics-of-failure analysis of tested IGBT modules is provided.
KW - Failure mechanism
KW - insulated-gate bipolar transistor module
KW - lifetime model
KW - physics-of-failure
KW - power cycling test
KW - reliability
UR - http://www.scopus.com/inward/record.url?scp=84978761403&partnerID=8YFLogxK
U2 - 10.1109/TPEL.2016.2521899
DO - 10.1109/TPEL.2016.2521899
M3 - Article
AN - SCOPUS:84978761403
SN - 0885-8993
VL - 31
SP - 8371
EP - 8386
JO - IEEE Transactions on Power Electronics
JF - IEEE Transactions on Power Electronics
IS - 12
M1 - 7434029
ER -