Advanced interfacial phase change material: Structurally confined and interfacially extended superlattice

Hyeonwook Lim; Youngsam Kim; Kyu Jin Jo; Choi Seok; Chang Woo Lee; Dasol Kim; Gihyeon Kwon; Hoedon Kwon; Soobin Hwang; Kwangsik Jeong; Byung Joon Choi; Cheol Woong Yang; Eunji Sim; Mann Ho Cho

doi:10.1016/j.mattod.2023.07.025

Advanced interfacial phase change material: Structurally confined and interfacially extended superlattice

Hyeonwook Lim, Youngsam Kim, Kyu Jin Jo, Choi Seok, Chang Woo Lee, Dasol Kim, Gihyeon Kwon, Hoedon Kwon, Soobin Hwang, Kwangsik Jeong, Byung Joon Choi, Cheol Woong Yang, Eunji Sim, Mann Ho Cho

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Interfacial Phase Change Memory (iPCM) retrench unnecessary power consumption due to wasted heat generated during phase change by reducing unnecessary entropic loss. In this study, an advanced iPCM (GeTe/Ti-Sb₂Te₃ Superlattice) is synthesized by doping Ti into Sb₂Te₃. Structural analysis and density functional theory (DFT) calculations confirm that bonding distortion and structurally well-confined layers contribute to improve phase change properties in iPCM. Ti-Sb₂Te₃ acts as an effective thermal barrier to localize the generated heat inside active region, which leads to reduction of switching energy. Since Ge-Te bonds adjacent to short and strong Ti-Te bonds are more elongated than the bonds near Sb-Te, it is easier for Ge atoms to break the bond with Te due to strengthened Peierls distortions (R_long/R_short) during phase change process. Properties of advanced iPCM (cycling endurance, write speed/energy) exceed previous records. Moreover, well-confined multi-level states are obtained with advanced iPCM, showing potential as a neuromorphic memory. Our work paves the way for designing superlattice based PCM by controlling confinement layers.

Original language	English
Pages (from-to)	62-73
Number of pages	12
Journal	Materials Today
Volume	68
DOIs	https://doi.org/10.1016/j.mattod.2023.07.025
State	Published - Sep 2023

Keywords

Doping
Interfacial phase change materials
Neuromorphic
Superlattice
vdW layer

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10.1016/j.mattod.2023.07.025

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@article{5f5ee4a4fbd14b2bb6bdb57c6a8260c2,

title = "Advanced interfacial phase change material: Structurally confined and interfacially extended superlattice",

abstract = "Interfacial Phase Change Memory (iPCM) retrench unnecessary power consumption due to wasted heat generated during phase change by reducing unnecessary entropic loss. In this study, an advanced iPCM (GeTe/Ti-Sb2Te3 Superlattice) is synthesized by doping Ti into Sb2Te3. Structural analysis and density functional theory (DFT) calculations confirm that bonding distortion and structurally well-confined layers contribute to improve phase change properties in iPCM. Ti-Sb2Te3 acts as an effective thermal barrier to localize the generated heat inside active region, which leads to reduction of switching energy. Since Ge-Te bonds adjacent to short and strong Ti-Te bonds are more elongated than the bonds near Sb-Te, it is easier for Ge atoms to break the bond with Te due to strengthened Peierls distortions (Rlong/Rshort) during phase change process. Properties of advanced iPCM (cycling endurance, write speed/energy) exceed previous records. Moreover, well-confined multi-level states are obtained with advanced iPCM, showing potential as a neuromorphic memory. Our work paves the way for designing superlattice based PCM by controlling confinement layers.",

keywords = "Doping, Interfacial phase change materials, Neuromorphic, Superlattice, vdW layer",

author = "Hyeonwook Lim and Youngsam Kim and Jo, \{Kyu Jin\} and Choi Seok and Lee, \{Chang Woo\} and Dasol Kim and Gihyeon Kwon and Hoedon Kwon and Soobin Hwang and Kwangsik Jeong and Choi, \{Byung Joon\} and Yang, \{Cheol Woong\} and Eunji Sim and Cho, \{Mann Ho\}",

note = "Publisher Copyright: {\textcopyright} 2023 Elsevier Ltd",

year = "2023",

month = sep,

doi = "10.1016/j.mattod.2023.07.025",

language = "English",

volume = "68",

pages = "62--73",

journal = "Materials Today",

issn = "1369-7021",

}

TY - JOUR

T1 - Advanced interfacial phase change material

T2 - Structurally confined and interfacially extended superlattice

AU - Lim, Hyeonwook

AU - Kim, Youngsam

AU - Jo, Kyu Jin

AU - Seok, Choi

AU - Lee, Chang Woo

AU - Kim, Dasol

AU - Kwon, Gihyeon

AU - Kwon, Hoedon

AU - Hwang, Soobin

AU - Jeong, Kwangsik

AU - Choi, Byung Joon

AU - Yang, Cheol Woong

AU - Sim, Eunji

AU - Cho, Mann Ho

PY - 2023/9

Y1 - 2023/9

N2 - Interfacial Phase Change Memory (iPCM) retrench unnecessary power consumption due to wasted heat generated during phase change by reducing unnecessary entropic loss. In this study, an advanced iPCM (GeTe/Ti-Sb2Te3 Superlattice) is synthesized by doping Ti into Sb2Te3. Structural analysis and density functional theory (DFT) calculations confirm that bonding distortion and structurally well-confined layers contribute to improve phase change properties in iPCM. Ti-Sb2Te3 acts as an effective thermal barrier to localize the generated heat inside active region, which leads to reduction of switching energy. Since Ge-Te bonds adjacent to short and strong Ti-Te bonds are more elongated than the bonds near Sb-Te, it is easier for Ge atoms to break the bond with Te due to strengthened Peierls distortions (Rlong/Rshort) during phase change process. Properties of advanced iPCM (cycling endurance, write speed/energy) exceed previous records. Moreover, well-confined multi-level states are obtained with advanced iPCM, showing potential as a neuromorphic memory. Our work paves the way for designing superlattice based PCM by controlling confinement layers.

AB - Interfacial Phase Change Memory (iPCM) retrench unnecessary power consumption due to wasted heat generated during phase change by reducing unnecessary entropic loss. In this study, an advanced iPCM (GeTe/Ti-Sb2Te3 Superlattice) is synthesized by doping Ti into Sb2Te3. Structural analysis and density functional theory (DFT) calculations confirm that bonding distortion and structurally well-confined layers contribute to improve phase change properties in iPCM. Ti-Sb2Te3 acts as an effective thermal barrier to localize the generated heat inside active region, which leads to reduction of switching energy. Since Ge-Te bonds adjacent to short and strong Ti-Te bonds are more elongated than the bonds near Sb-Te, it is easier for Ge atoms to break the bond with Te due to strengthened Peierls distortions (Rlong/Rshort) during phase change process. Properties of advanced iPCM (cycling endurance, write speed/energy) exceed previous records. Moreover, well-confined multi-level states are obtained with advanced iPCM, showing potential as a neuromorphic memory. Our work paves the way for designing superlattice based PCM by controlling confinement layers.

KW - Doping

KW - Interfacial phase change materials

KW - Neuromorphic

KW - Superlattice

KW - vdW layer

UR - http://www.scopus.com/inward/record.url?scp=85172001304&partnerID=8YFLogxK

U2 - 10.1016/j.mattod.2023.07.025

DO - 10.1016/j.mattod.2023.07.025

M3 - Article

AN - SCOPUS:85172001304

SN - 1369-7021

VL - 68

SP - 62

EP - 73

JO - Materials Today

JF - Materials Today

ER -

Advanced interfacial phase change material: Structurally confined and interfacially extended superlattice

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Keywords

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