Advancements in Metal Passivation Process for Low-Temperature Cu-Cu Direct Bonding

Park Jong-Kyung; Park Sang-Woo; Jeong Min-Seong

doi:10.1109/ISOCC59558.2023.10396380

Advancements in Metal Passivation Process for Low-Temperature Cu-Cu Direct Bonding

Park Jong-Kyung, Park Sang-Woo, Jeong Min-Seong

Dept. of Semiconductor Engineering

Seoul National University of Science and Technology (SNUST)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

With the emergence of 3D packaging technology, Cu-Cu direct bonding is significant attention. In this paper, we investigated metal passivation layer for low-temperature Cu-Cu direct bonding. We analyzed the characteristics of the Ti metal passivation layer and investigated the variations in diffusion process based an different deposition conditions. Additionally, we conducted various types of metal passivation bonding to compare their diffusion characteristics.

Original language	English
Title of host publication	Proceedings - International SoC Design Conference 2023, ISOCC 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	223-224
Number of pages	2
ISBN (Electronic)	9798350327038
DOIs	https://doi.org/10.1109/ISOCC59558.2023.10396380
State	Published - 2023
Event	20th International SoC Design Conference, ISOCC 2023 - Jeju, Korea, Republic of Duration: 25 Oct 2023 → 28 Oct 2023

Publication series

Name	Proceedings - International SoC Design Conference 2023, ISOCC 2023

Conference

Conference	20th International SoC Design Conference, ISOCC 2023
Country/Territory	Korea, Republic of
City	Jeju
Period	25/10/23 → 28/10/23

Keywords

3D packaging
Chip-to-Chip bonding
Diffusion mechanism
Metal passivation

Access to Document

10.1109/ISOCC59558.2023.10396380

Cite this

Jong-Kyung, P., Sang-Woo, P., & Min-Seong, J. (2023). Advancements in Metal Passivation Process for Low-Temperature Cu-Cu Direct Bonding. In Proceedings - International SoC Design Conference 2023, ISOCC 2023 (pp. 223-224). (Proceedings - International SoC Design Conference 2023, ISOCC 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISOCC59558.2023.10396380

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title = "Advancements in Metal Passivation Process for Low-Temperature Cu-Cu Direct Bonding",

abstract = "With the emergence of 3D packaging technology, Cu-Cu direct bonding is significant attention. In this paper, we investigated metal passivation layer for low-temperature Cu-Cu direct bonding. We analyzed the characteristics of the Ti metal passivation layer and investigated the variations in diffusion process based an different deposition conditions. Additionally, we conducted various types of metal passivation bonding to compare their diffusion characteristics.",

keywords = "3D packaging, Chip-to-Chip bonding, Diffusion mechanism, Metal passivation",

author = "Park Jong-Kyung and Park Sang-Woo and Jeong Min-Seong",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 20th International SoC Design Conference, ISOCC 2023 ; Conference date: 25-10-2023 Through 28-10-2023",

year = "2023",

doi = "10.1109/ISOCC59558.2023.10396380",

language = "English",

series = "Proceedings - International SoC Design Conference 2023, ISOCC 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Jong-Kyung, P, Sang-Woo, P & Min-Seong, J 2023, Advancements in Metal Passivation Process for Low-Temperature Cu-Cu Direct Bonding. in Proceedings - International SoC Design Conference 2023, ISOCC 2023. Proceedings - International SoC Design Conference 2023, ISOCC 2023, Institute of Electrical and Electronics Engineers Inc., pp. 223-224, 20th International SoC Design Conference, ISOCC 2023, Jeju, Korea, Republic of, 25/10/23. https://doi.org/10.1109/ISOCC59558.2023.10396380

Advancements in Metal Passivation Process for Low-Temperature Cu-Cu Direct Bonding. / Jong-Kyung, Park; Sang-Woo, Park; Min-Seong, Jeong.
Proceedings - International SoC Design Conference 2023, ISOCC 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 223-224 (Proceedings - International SoC Design Conference 2023, ISOCC 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Min-Seong, Jeong

PY - 2023

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N2 - With the emergence of 3D packaging technology, Cu-Cu direct bonding is significant attention. In this paper, we investigated metal passivation layer for low-temperature Cu-Cu direct bonding. We analyzed the characteristics of the Ti metal passivation layer and investigated the variations in diffusion process based an different deposition conditions. Additionally, we conducted various types of metal passivation bonding to compare their diffusion characteristics.

AB - With the emergence of 3D packaging technology, Cu-Cu direct bonding is significant attention. In this paper, we investigated metal passivation layer for low-temperature Cu-Cu direct bonding. We analyzed the characteristics of the Ti metal passivation layer and investigated the variations in diffusion process based an different deposition conditions. Additionally, we conducted various types of metal passivation bonding to compare their diffusion characteristics.

KW - 3D packaging

KW - Chip-to-Chip bonding

KW - Diffusion mechanism

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T3 - Proceedings - International SoC Design Conference 2023, ISOCC 2023

SP - 223

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BT - Proceedings - International SoC Design Conference 2023, ISOCC 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 20th International SoC Design Conference, ISOCC 2023

Y2 - 25 October 2023 through 28 October 2023

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Jong-Kyung P, Sang-Woo P, Min-Seong J. Advancements in Metal Passivation Process for Low-Temperature Cu-Cu Direct Bonding. In Proceedings - International SoC Design Conference 2023, ISOCC 2023. Institute of Electrical and Electronics Engineers Inc. 2023. p. 223-224. (Proceedings - International SoC Design Conference 2023, ISOCC 2023). doi: 10.1109/ISOCC59558.2023.10396380

Advancements in Metal Passivation Process for Low-Temperature Cu-Cu Direct Bonding

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