@inproceedings{003058e072e74bd28f339400ac8ba50b,
title = "Advancements in Metal Passivation Process for Low-Temperature Cu-Cu Direct Bonding",
abstract = "With the emergence of 3D packaging technology, Cu-Cu direct bonding is significant attention. In this paper, we investigated metal passivation layer for low-temperature Cu-Cu direct bonding. We analyzed the characteristics of the Ti metal passivation layer and investigated the variations in diffusion process based an different deposition conditions. Additionally, we conducted various types of metal passivation bonding to compare their diffusion characteristics.",
keywords = "3D packaging, Chip-to-Chip bonding, Diffusion mechanism, Metal passivation",
author = "Park Jong-Kyung and Park Sang-Woo and Jeong Min-Seong",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 20th International SoC Design Conference, ISOCC 2023 ; Conference date: 25-10-2023 Through 28-10-2023",
year = "2023",
doi = "10.1109/ISOCC59558.2023.10396380",
language = "English",
series = "Proceedings - International SoC Design Conference 2023, ISOCC 2023",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "223--224",
booktitle = "Proceedings - International SoC Design Conference 2023, ISOCC 2023",
}