TY - JOUR
T1 - ALD and pulsed CVD of Ru, RuO2, and SrRuO3
AU - Han, Jeong Hwan
AU - Hwang, Cheol Seong
PY - 2013
Y1 - 2013
N2 - Atomic layer deposition (ALD) and pulsed chemical vapor deposition (p-CVD) of Ru-based films, such as Ru, RuO2, and SrRuO3, were examined for their application to advanced dynamic random access memory capacitor with a design rule of < 20 nm. Growth characteristics and film properties of Ru grown by ALD and p-CVD using (DMPD)(EtCp)Ru and RuO 4, respectively, were comparatively examined. Furthermore, deposition of RuO2 and SrRuO3 electrodes was explored by p-CVD and combined ALD/CVD processes using RuO4 and Sr(iPr3Cp) 2 as Ru and Sr precursors, respectively. The leakage current density and equivalent oxide thickness of metal-insulator-metal capacitor, where Ru based electrodes and higher-k dielectrics were adopted, were also studied.
AB - Atomic layer deposition (ALD) and pulsed chemical vapor deposition (p-CVD) of Ru-based films, such as Ru, RuO2, and SrRuO3, were examined for their application to advanced dynamic random access memory capacitor with a design rule of < 20 nm. Growth characteristics and film properties of Ru grown by ALD and p-CVD using (DMPD)(EtCp)Ru and RuO 4, respectively, were comparatively examined. Furthermore, deposition of RuO2 and SrRuO3 electrodes was explored by p-CVD and combined ALD/CVD processes using RuO4 and Sr(iPr3Cp) 2 as Ru and Sr precursors, respectively. The leakage current density and equivalent oxide thickness of metal-insulator-metal capacitor, where Ru based electrodes and higher-k dielectrics were adopted, were also studied.
UR - http://www.scopus.com/inward/record.url?scp=84904913041&partnerID=8YFLogxK
U2 - 10.1149/05810.0171ecst
DO - 10.1149/05810.0171ecst
M3 - Article
AN - SCOPUS:84904913041
SN - 1938-5862
VL - 58
SP - 171
EP - 182
JO - ECS Transactions
JF - ECS Transactions
IS - 10
ER -