ALD and pulsed CVD of Ru, RuO2, and SrRuO3

Jeong Hwan Han; Cheol Seong Hwang

doi:10.1149/05810.0171ecst

ALD and pulsed CVD of Ru, RuO₂, and SrRuO₃

Jeong Hwan Han
, Cheol Seong Hwang

Dept. of Materials Science & Engineering

Seoul National University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Atomic layer deposition (ALD) and pulsed chemical vapor deposition (p-CVD) of Ru-based films, such as Ru, RuO₂, and SrRuO₃, were examined for their application to advanced dynamic random access memory capacitor with a design rule of < 20 nm. Growth characteristics and film properties of Ru grown by ALD and p-CVD using (DMPD)(EtCp)Ru and RuO ₄, respectively, were comparatively examined. Furthermore, deposition of RuO₂ and SrRuO₃ electrodes was explored by p-CVD and combined ALD/CVD processes using RuO₄ and Sr(iPr₃Cp) ₂ as Ru and Sr precursors, respectively. The leakage current density and equivalent oxide thickness of metal-insulator-metal capacitor, where Ru based electrodes and higher-k dielectrics were adopted, were also studied.

Original language	English
Pages (from-to)	171-182
Number of pages	12
Journal	ECS Transactions
Volume	58
Issue number	10
DOIs	https://doi.org/10.1149/05810.0171ecst
State	Published - 2013

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abstract = "Atomic layer deposition (ALD) and pulsed chemical vapor deposition (p-CVD) of Ru-based films, such as Ru, RuO2, and SrRuO3, were examined for their application to advanced dynamic random access memory capacitor with a design rule of < 20 nm. Growth characteristics and film properties of Ru grown by ALD and p-CVD using (DMPD)(EtCp)Ru and RuO 4, respectively, were comparatively examined. Furthermore, deposition of RuO2 and SrRuO3 electrodes was explored by p-CVD and combined ALD/CVD processes using RuO4 and Sr(iPr3Cp) 2 as Ru and Sr precursors, respectively. The leakage current density and equivalent oxide thickness of metal-insulator-metal capacitor, where Ru based electrodes and higher-k dielectrics were adopted, were also studied.",

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AU - Han, Jeong Hwan

AU - Hwang, Cheol Seong

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N2 - Atomic layer deposition (ALD) and pulsed chemical vapor deposition (p-CVD) of Ru-based films, such as Ru, RuO2, and SrRuO3, were examined for their application to advanced dynamic random access memory capacitor with a design rule of < 20 nm. Growth characteristics and film properties of Ru grown by ALD and p-CVD using (DMPD)(EtCp)Ru and RuO 4, respectively, were comparatively examined. Furthermore, deposition of RuO2 and SrRuO3 electrodes was explored by p-CVD and combined ALD/CVD processes using RuO4 and Sr(iPr3Cp) 2 as Ru and Sr precursors, respectively. The leakage current density and equivalent oxide thickness of metal-insulator-metal capacitor, where Ru based electrodes and higher-k dielectrics were adopted, were also studied.

AB - Atomic layer deposition (ALD) and pulsed chemical vapor deposition (p-CVD) of Ru-based films, such as Ru, RuO2, and SrRuO3, were examined for their application to advanced dynamic random access memory capacitor with a design rule of < 20 nm. Growth characteristics and film properties of Ru grown by ALD and p-CVD using (DMPD)(EtCp)Ru and RuO 4, respectively, were comparatively examined. Furthermore, deposition of RuO2 and SrRuO3 electrodes was explored by p-CVD and combined ALD/CVD processes using RuO4 and Sr(iPr3Cp) 2 as Ru and Sr precursors, respectively. The leakage current density and equivalent oxide thickness of metal-insulator-metal capacitor, where Ru based electrodes and higher-k dielectrics were adopted, were also studied.

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DO - 10.1149/05810.0171ecst

M3 - Article

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SN - 1938-5862

VL - 58

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EP - 182

JO - ECS Transactions

JF - ECS Transactions

IS - 10

ER -

ALD and pulsed CVD of Ru, RuO₂, and SrRuO₃

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