AlGaN-based ternary nitride memristors

Resistive switching memory or memristors have been extensively studied worldwide, driven by perspective applications in nonvolatile memory, processing-in-memory, and neuromorphic computing hardware. Binary oxides are the most prevalent memristive materials; however, non-oxide materials can also exhibit resistive switching. In this study, ternary nitride alloy memristors were fabricated using AlGaN films and were investigated. AlGaN memristors exhibit highly linear and repeatable resistive switching characteristics. Structural and chemical analyses indicate a plausible mechanism of the conduction channel formation in the ternary nitride memristors.