@inproceedings{54b3c42d0e8e4c5386b87341afb883ab,
title = "An 8.9-17.3 GHz Low Noise Amplifier in Enhancement-Mode GaAs 0.15-um pHEMT Process",
abstract = "This paper presents an enhancement-mode (E-mode) Gallium Arsenide (GaAs) 0.15-um pseudomorphic high-electron-mobility transistor (pHEMT) low-noise amplifier (LNA) which employs a positive gate bias condition. Under the 3-dB bandwidth of 8.9 to 17.3 GHz, the proposed LNA achieves a peak gain of 20.7 dB with a noise figure (NF) ranging from 0.75 to 1.5 dB. The measured input-referred 1-dB compression point (P1dB) is -11.9 dBm. The LNA consumes 34.8 mA from a 3 V supply and occupies a die area of 1.44",
keywords = "E-mode, GaAs, LNA, Upper-mid band",
author = "Sunwoo Kong and Lee, \{Hui Dong\} and Seunghyun Jang and Seunghun Wang and Bonghyuk Park",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE Asia-Pacific Microwave Conference, APMC 2024 ; Conference date: 17-11-2024 Through 20-11-2024",
year = "2024",
doi = "10.1109/APMC60911.2024.10867473",
language = "English",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1251--1253",
booktitle = "2024 Asia-Pacific Microwave Conference",
}