TY - GEN
T1 - An investigation into the effect of design parameters on plasma density in DBD (Dielectric Barrier Discharges)
AU - Kim, Jong Bong
AU - Shin, Myoung Soo
PY - 2013
Y1 - 2013
N2 - DBD (Dielectric Barrier Discharges) plasma is often used to clean the surface of semiconductors. The cleaning performance is affected by many process parameters such as electric voltage, the gas composition, gas speed, thickness of the dielectric wall, gap distance, and plasma duration time. In this study, the plasma density is predicted by a coupled simulation of gas flow, chemistry mixing and reaction, plasma generation, and electric field. A 13.56 MHz RF source is used to generate plasma. The effect of the dielectric thickness, the gap distance, the gas flow velocity, and electric voltage on the plasma density is investigated. It is shown that the plasma density increases as the dielectric thickness decreases, the gap distance increases, the gas velocity increases, and electric voltage increases, respectively. Finally, experiments are carried out to verify the analysis results.
AB - DBD (Dielectric Barrier Discharges) plasma is often used to clean the surface of semiconductors. The cleaning performance is affected by many process parameters such as electric voltage, the gas composition, gas speed, thickness of the dielectric wall, gap distance, and plasma duration time. In this study, the plasma density is predicted by a coupled simulation of gas flow, chemistry mixing and reaction, plasma generation, and electric field. A 13.56 MHz RF source is used to generate plasma. The effect of the dielectric thickness, the gap distance, the gas flow velocity, and electric voltage on the plasma density is investigated. It is shown that the plasma density increases as the dielectric thickness decreases, the gap distance increases, the gas velocity increases, and electric voltage increases, respectively. Finally, experiments are carried out to verify the analysis results.
KW - DBD (Dielectric Barrier Discharges)
KW - Plasma
KW - Simulation
UR - https://www.scopus.com/pages/publications/84884858219
U2 - 10.4028/www.scientific.net/AMR.742.469
DO - 10.4028/www.scientific.net/AMR.742.469
M3 - Conference contribution
AN - SCOPUS:84884858219
SN - 9783037857298
T3 - Advanced Materials Research
SP - 469
EP - 475
BT - Civil, Materials and Environmental Sciences
T2 - 2013 International Conference on Civil, Materials and Environmental Sciences, CMES 2013
Y2 - 17 April 2013 through 18 April 2013
ER -