Abstract
Phase-change memory is a promising technology due to its attractive properties. However, phase-change memory is difficult to commercialize because of its reliability issues. A read disturbance error, which is the main cause of reliability issues, occurs when a cell is repeatedly read. A conventional solution for read disturbance errors is periodically scrubbing the cells. However, this method requires read counters to count the number of reads per word. This paper proposes an on-demand scrubbing solution that does not require read counters, which significantly reduces resource overhead. The proposed method observes the number of errors in a word using error-correcting code. If the number of errors is larger than a pre-defined threshold, scrubbing is performed to fix the errors. The proposed method removes nearly 1GB of hardware overhead required by read counters, and fixes more than 99.99% of read disturbance errors.
| Original language | English |
|---|---|
| Pages (from-to) | 55-60 |
| Number of pages | 6 |
| Journal | IEIE Transactions on Smart Processing and Computing |
| Volume | 10 |
| Issue number | 1 |
| DOIs | |
| State | Published - Feb 2021 |
Keywords
- Non-volatile memory
- On-demand scrubbing
- Phase-change memory
- Read disturbance errors
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