Analysis of the Effects of Bonding Misalignment on Current Density and Resistance Variation in Semiconductor Packaging Processes

In this study, the impact of misalignment in semiconductor packaging processes on the current density distribution and resistance characteristics at the bonding interface was analyzed. Finite element method (FEM)-based simulations using Ansys were conducted, and the results were validated through bonding process experiments. Simulation results revealed that the central region of the bonding interface exhibited relatively low current density, whereas higher current density was observed at the edges along the direction opposite to the applied electrical signal. As misalignment increased, localized current density surged in specific regions, altering the current flow pattern. Notably, when the misalignment exceeded a critical threshold, the area of concentrated current density expanded, leading to a deterioration in electrical characteristics. Experimental validation further confirmed that resistance increased with greater misalignment, and a sharp rise in resistance was observed beyond a specific threshold. These findings suggest that misalignment not only reduces the effective bonding area but also distorts the current flow, thereby impacting electrical signal transmission. This study demonstrates that minimizing misalignment in semiconductor packaging is a key factor in optimizing electrical performance. However, given that misalignment is an inherent aspect of semiconductor fabrication, complete elimination is impractical. Instead, structural design modifications are necessary to mitigate its impact on electrical characteristics. Based on the results, we propose that optimizing the bonding interface layout can alleviate localized current density concentration and enhance signal transmission efficiency.