Analysis of the laser transmission rate of silicon (Si) applied to flip-chip bonding

Chun Sam Song, Jong Hyeong Kim, Joo Han Kim, Joon Hyun Kim, Joo Hyun Kim

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

The present study explored a flip-chip packaging method where transmission bonding is performed using the laser beam transmission rate of Si, the main material of flip chips. Here, the transmission of Si by a laser beam using laser wavelength in the IR domain (1,064 nm) was demonstrated through experiments. Further experiments were then conducted where the results were applied to actual flip chip bonding. The mechanical properties of the flip-chip solder joints were analyzed through experiments, and the degree of thermal effect was analyzed through simulation. The results showed that, in flip chip bonding, laser transmission bonding was advantageous in mechanical, thermal, and temporal terms relative to conventional bonding (thermo-compression).

Original languageEnglish
Title of host publication2010 Proceedings 60th Electronic Components and Technology Conference, ECTC 2010
Pages2042-2047
Number of pages6
DOIs
StatePublished - 2010
Event60th Electronic Components and Technology Conference, ECTC 2010 - Las Vegas, NV, United States
Duration: 1 Jun 20104 Jun 2010

Publication series

NameProceedings - Electronic Components and Technology Conference
ISSN (Print)0569-5503

Conference

Conference60th Electronic Components and Technology Conference, ECTC 2010
Country/TerritoryUnited States
CityLas Vegas, NV
Period1/06/104/06/10

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