@inproceedings{25cec4a88df6461bb88ac8131759c5a0,
title = "Analysis of thermal effects of through silicon via in 3D IC using Infrared microscopy",
abstract = "Thermal management of 3D IC is an important factor in terms of performance and reliability. In this study, the feasibility of Cu TSV as a heat dissipation path was experimentally investigated. 40 μm thick Si wafer was point-heated at 50 °, 100 °, 150 ° and 200 ° and surface temperature profile on the other side was observed using IR microscope. Specimens with TSV showed higher maximum temperature and larger hot area than ones without TSV above 100 °, which implies TSV delivered the heat faster than Si bulk and can be used as a fast heat dissipation path. In a two tier stacked structure, the effect of TSV was not noticeable because of thick substrate wafer.",
keywords = "Heating, Integrated circuits, Microscopy, Silicon, Substrates, Temperature measurement, Three-dimensional displays",
author = "Yoonhwan Shin and Kim, \{Sarah Eunkyung\} and Sungdong Kim",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015 ; Conference date: 18-05-2015 Through 21-05-2015",
year = "2015",
month = nov,
day = "10",
doi = "10.1109/IITC-MAM.2015.7325654",
language = "English",
series = "2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "249--251",
booktitle = "2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015",
}