@inproceedings{f33ba1d61d744141b3c30636d994cc6b,
title = "Analysis on Fully Depleted Negative Capacitance Field-Effect Transistor (NCFET) Based on Electrostatic Potential Difference",
abstract = "Negative capacitance (NC) has been utilized for steep switching devices. For an accurate anticipation of a device operation, it is needed to understand the mechanism of NC effect in NC-based metal-oxide-semiconductor field-effect transistors (MOSFETs); NCFETs. In this work, NC effect of ferroelectric gate stack has been studied in an aspect of potential change by using technology computer-aided design (TCAD) simulation. In addition, a significance of determining appropriate ferroelectric layer thickness is discussed with the help of transfer characteristics.",
keywords = "CMOS, ferroelectric material, low power device, NCFET, negative capacitance",
author = "Kitae Lee and Junil Lee and Sihyun Kim and Soyoun Kim and Munhyeon Kim and Sangwan Kim and Park, \{Byung Gook\}",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",
year = "2019",
month = mar,
doi = "10.1109/EDTM.2019.8731124",
language = "English",
series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "422--424",
booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
}