Anode-interface localized filamentary mechanism in resistive switching of Ti O2 thin films

Kyung Min Kim; Byung Joon Choi; Yong Cheol Shin; Seol Choi; Cheol Seong Hwang

doi:10.1063/1.2749846

Anode-interface localized filamentary mechanism in resistive switching of Ti O2 thin films

Kyung Min Kim, Byung Joon Choi, Yong Cheol Shin, Seol Choi, Cheol Seong Hwang

Dept. of Materials Science & Engineering

Seoul National University

Research output: Contribution to journal › Article › peer-review

424 Scopus citations

Abstract

The filamentary resistance switching mechanism of a Pt40 nm Ti O2 Pt capacitor structure in voltage sweep mode was investigated. It was unambiguously found that the conducting filaments propagate from the cathode interface and that the resistance switching is induced by the rupture and recovery of the filaments in the localized region (3-10 nm thick) near the anode. The electrical conduction behavior in the high resistance state was well explained by the space charge limited current (SCLC) mechanism that occurs in the filament-free region. The various parameters extracted from the SCLC fitting supported the localized rupture and formation of filaments near the anode.

Original language	English
Article number	012907
Journal	Applied Physics Letters
Volume	91
Issue number	1
DOIs	https://doi.org/10.1063/1.2749846
State	Published - 2007

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title = "Anode-interface localized filamentary mechanism in resistive switching of Ti O2 thin films",

abstract = "The filamentary resistance switching mechanism of a Pt40 nm Ti O2 Pt capacitor structure in voltage sweep mode was investigated. It was unambiguously found that the conducting filaments propagate from the cathode interface and that the resistance switching is induced by the rupture and recovery of the filaments in the localized region (3-10 nm thick) near the anode. The electrical conduction behavior in the high resistance state was well explained by the space charge limited current (SCLC) mechanism that occurs in the filament-free region. The various parameters extracted from the SCLC fitting supported the localized rupture and formation of filaments near the anode.",

author = "Kim, \{Kyung Min\} and Choi, \{Byung Joon\} and Shin, \{Yong Cheol\} and Seol Choi and Hwang, \{Cheol Seong\}",

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T1 - Anode-interface localized filamentary mechanism in resistive switching of Ti O2 thin films

AU - Kim, Kyung Min

AU - Choi, Byung Joon

AU - Shin, Yong Cheol

AU - Choi, Seol

AU - Hwang, Cheol Seong

PY - 2007

Y1 - 2007

N2 - The filamentary resistance switching mechanism of a Pt40 nm Ti O2 Pt capacitor structure in voltage sweep mode was investigated. It was unambiguously found that the conducting filaments propagate from the cathode interface and that the resistance switching is induced by the rupture and recovery of the filaments in the localized region (3-10 nm thick) near the anode. The electrical conduction behavior in the high resistance state was well explained by the space charge limited current (SCLC) mechanism that occurs in the filament-free region. The various parameters extracted from the SCLC fitting supported the localized rupture and formation of filaments near the anode.

AB - The filamentary resistance switching mechanism of a Pt40 nm Ti O2 Pt capacitor structure in voltage sweep mode was investigated. It was unambiguously found that the conducting filaments propagate from the cathode interface and that the resistance switching is induced by the rupture and recovery of the filaments in the localized region (3-10 nm thick) near the anode. The electrical conduction behavior in the high resistance state was well explained by the space charge limited current (SCLC) mechanism that occurs in the filament-free region. The various parameters extracted from the SCLC fitting supported the localized rupture and formation of filaments near the anode.

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VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 012907

ER -

Anode-interface localized filamentary mechanism in resistive switching of Ti O2 thin films

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