Abstract
The effect of Ar/N2 two-step plasma treatment on the quantitative interfacial adhesion energy of low temperature Cu-Cu bonding interface were systematically investigated. X-ray photoelectron spectroscopy analysis showed that Ar/N2 2-step plasma treatment has less copper oxide due to the formation of an effective Cu4N passivation layer. Quantitative measurements of interfacial adhesion energy of Cu-Cu bonding interface with Ar/N2 2-step plasma treatment were performed using a double cantilever beam (DCB) and 4-point bending (4-PB) test, where the measured values were 1.63±0.24 J/m2 and 2.33±0.67 J/m2, respectively. This can be explained by the increased interfacial adhesion energy according phase angle due to the effect of the higher interface roughness of 4-PB test than that of DCB test.
| Translated title of the contribution | Effects of Ar/N2 Two-step Plasma Treatment on the Quantitative Interfacial Adhesion Energy of Low-Temperature Cu-Cu Bonding Interface |
|---|---|
| Original language | Korean |
| Pages (from-to) | 29-37 |
| Number of pages | 9 |
| Journal | 마이크로전자 및 패키징학회지 |
| Volume | 28 |
| Issue number | 2 |
| DOIs | |
| State | Published - Jun 2021 |