Atomic-layer-deposited SnO film using novel Sn(dmamb)2 precursor for p-channel thin film transistor

Myeong Gil Chae; Seong Ho Han; Bo Keun Park; Taek Mo Chung; Jeong Hwan Han

doi:10.1016/j.apsusc.2020.148758

Atomic-layer-deposited SnO film using novel Sn(dmamb)₂ precursor for p-channel thin film transistor

Myeong Gil Chae, Seong Ho Han, Bo Keun Park, Taek Mo Chung, Jeong Hwan Han

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Atomic layer deposition of SnO was explored using a novel Sn complex, bis(dimethylamino-2methyl-2butoxy)tin(II) [Sn(dmamb)₂], and H₂O as the Sn precursor and reactant, respectively. Sn(dmamb)₂ showed a facile ligand exchange reaction with H₂O at temperatures of 100–200 °C, which resulted in the fabrication of pure SnO thin films. Amorphous SnO films were obtained at all the investigated temperatures, but the pure Sn²⁺–O²⁻ phase was observed only in the films produced at 100 and 150 °C. The amorphous SnO was crystallized by a rapid thermal annealing post-process in N₂ ambient at 450 °C. A bottom-gate thin film transistor was fabricated using a crystallized SnO channel layer, and excellent drain current modulation and p-type behavior were obtained, with an on/off ratio of ~7 × 10⁴ and a saturation field effect mobility of 0.5 cm²/V·s.

Original language	English
Article number	148758
Journal	Applied Surface Science
Volume	547
DOIs	https://doi.org/10.1016/j.apsusc.2020.148758
State	Published - 1 May 2021

Keywords

Atomic layer deposition
P-type thin film transistor
Rapid thermal annealing
Sn(dmamb)
SnO

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@article{9849ad326b8147f5993053f696dd5f7a,

title = "Atomic-layer-deposited SnO film using novel Sn(dmamb)2 precursor for p-channel thin film transistor",

abstract = "Atomic layer deposition of SnO was explored using a novel Sn complex, bis(dimethylamino-2methyl-2butoxy)tin(II) [Sn(dmamb)2], and H2O as the Sn precursor and reactant, respectively. Sn(dmamb)2 showed a facile ligand exchange reaction with H2O at temperatures of 100–200 °C, which resulted in the fabrication of pure SnO thin films. Amorphous SnO films were obtained at all the investigated temperatures, but the pure Sn2+–O2− phase was observed only in the films produced at 100 and 150 °C. The amorphous SnO was crystallized by a rapid thermal annealing post-process in N2 ambient at 450 °C. A bottom-gate thin film transistor was fabricated using a crystallized SnO channel layer, and excellent drain current modulation and p-type behavior were obtained, with an on/off ratio of \textasciitilde{}7 × 104 and a saturation field effect mobility of 0.5 cm2/V·s.",

keywords = "Atomic layer deposition, P-type thin film transistor, Rapid thermal annealing, Sn(dmamb), SnO",

author = "Chae, \{Myeong Gil\} and Han, \{Seong Ho\} and Park, \{Bo Keun\} and Chung, \{Taek Mo\} and Han, \{Jeong Hwan\}",

note = "Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",

year = "2021",

month = may,

day = "1",

doi = "10.1016/j.apsusc.2020.148758",

language = "English",

volume = "547",

journal = "Applied Surface Science",

issn = "0169-4332",

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TY - JOUR

T1 - Atomic-layer-deposited SnO film using novel Sn(dmamb)2 precursor for p-channel thin film transistor

AU - Chae, Myeong Gil

AU - Han, Seong Ho

AU - Park, Bo Keun

AU - Chung, Taek Mo

AU - Han, Jeong Hwan

PY - 2021/5/1

Y1 - 2021/5/1

N2 - Atomic layer deposition of SnO was explored using a novel Sn complex, bis(dimethylamino-2methyl-2butoxy)tin(II) [Sn(dmamb)2], and H2O as the Sn precursor and reactant, respectively. Sn(dmamb)2 showed a facile ligand exchange reaction with H2O at temperatures of 100–200 °C, which resulted in the fabrication of pure SnO thin films. Amorphous SnO films were obtained at all the investigated temperatures, but the pure Sn2+–O2− phase was observed only in the films produced at 100 and 150 °C. The amorphous SnO was crystallized by a rapid thermal annealing post-process in N2 ambient at 450 °C. A bottom-gate thin film transistor was fabricated using a crystallized SnO channel layer, and excellent drain current modulation and p-type behavior were obtained, with an on/off ratio of ~7 × 104 and a saturation field effect mobility of 0.5 cm2/V·s.

AB - Atomic layer deposition of SnO was explored using a novel Sn complex, bis(dimethylamino-2methyl-2butoxy)tin(II) [Sn(dmamb)2], and H2O as the Sn precursor and reactant, respectively. Sn(dmamb)2 showed a facile ligand exchange reaction with H2O at temperatures of 100–200 °C, which resulted in the fabrication of pure SnO thin films. Amorphous SnO films were obtained at all the investigated temperatures, but the pure Sn2+–O2− phase was observed only in the films produced at 100 and 150 °C. The amorphous SnO was crystallized by a rapid thermal annealing post-process in N2 ambient at 450 °C. A bottom-gate thin film transistor was fabricated using a crystallized SnO channel layer, and excellent drain current modulation and p-type behavior were obtained, with an on/off ratio of ~7 × 104 and a saturation field effect mobility of 0.5 cm2/V·s.

KW - Atomic layer deposition

KW - P-type thin film transistor

KW - Rapid thermal annealing

KW - Sn(dmamb)

KW - SnO

UR - https://www.scopus.com/pages/publications/85100419253

U2 - 10.1016/j.apsusc.2020.148758

DO - 10.1016/j.apsusc.2020.148758

M3 - Article

AN - SCOPUS:85100419253

SN - 0169-4332

VL - 547

JO - Applied Surface Science

JF - Applied Surface Science

M1 - 148758

ER -

Atomic-layer-deposited SnO film using novel Sn(dmamb)₂ precursor for p-channel thin film transistor

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Keywords

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