Atomic layer deposition of pure In₂O₃ films for a temperature range of 200–300 °C using heteroleptic liquid In(DMAMP)₂(OⁱPr) precursor

In₂O₃ films were deposited by atomic layer deposition (ALD) using a newly synthesized heteroleptic In precursor, In(DMAMP)₂(OⁱPr), and O₃ at 150–300 °C. Self-limiting growth characteristics were exhibited for a wide ALD temperature range of 200–300 °C and growth rate of 0.029–0.033 nm/cycle. At a low temperature of 150 °C, the amorphous In₂O₃ film was deposited, while polycrystalline In₂O₃ films were achieved at 200–300 °C. The In₂O₃ films grown in this ALD temperature range had high densities of 7.0–7.2 g/cm³, which are comparable to those of bulk In₂O₃. At all growth temperatures (150–300 °C), no carbon or nitrogen impurities were detected, suggesting high reactivity of the In(DMAMP)₂(OⁱPr) precursor. The ALD In₂O₃ films showed n-type electronic property with high electron concentrations of 1.6 × 10²⁰–3.6 × 10²⁰/cm³ and a Hall mobility of 31–39 cm²/V·s.