Atomic layer deposition of TiO2 and Al-doped TiO2 films on Ir substrates for ultralow leakage currents

Seong Keun Kim; Sora Han; Jeong Hwan Han; Woongkyu Lee; Cheol Seong Hwang

doi:10.1002/pssr.201105250

Atomic layer deposition of TiO₂ and Al-doped TiO₂ films on Ir substrates for ultralow leakage currents

Seong Keun Kim, Sora Han, Jeong Hwan Han, Woongkyu Lee, Cheol Seong Hwang

Dept. of Materials Science & Engineering

Seoul National University

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

TiO₂ and Al-doped TiO₂ (ATO) films were grown on Ir substrates by atomic layer deposition using O₃ as the oxygen source. With increasing O₃ feeding time, the crystalline structure of the TiO₂ films was transformed from anatase to rutile. Above an O₃ feeding time of 35 s, the films crystallized as only rutile due to the formation of IrO₂ layer at the interface. The TiO₂ and ATO films showed higher dielectric constants of 78 and 51, respectively. The films on Ir showed superior leakage properties compared to the films on Ru due to the high work-function of Ir.

Original language	English
Pages (from-to)	262-264
Number of pages	3
Journal	Physica Status Solidi - Rapid Research Letters
Volume	5
Issue number	8
DOIs	https://doi.org/10.1002/pssr.201105250
State	Published - Aug 2011

Keywords

Atomic layer deposition
Iridium
TiO

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title = "Atomic layer deposition of TiO2 and Al-doped TiO2 films on Ir substrates for ultralow leakage currents",

abstract = "TiO2 and Al-doped TiO2 (ATO) films were grown on Ir substrates by atomic layer deposition using O3 as the oxygen source. With increasing O3 feeding time, the crystalline structure of the TiO2 films was transformed from anatase to rutile. Above an O3 feeding time of 35 s, the films crystallized as only rutile due to the formation of IrO2 layer at the interface. The TiO2 and ATO films showed higher dielectric constants of 78 and 51, respectively. The films on Ir showed superior leakage properties compared to the films on Ru due to the high work-function of Ir.",

keywords = "Atomic layer deposition, Iridium, TiO",

author = "Kim, {Seong Keun} and Sora Han and Han, {Jeong Hwan} and Woongkyu Lee and Hwang, {Cheol Seong}",

year = "2011",

month = aug,

doi = "10.1002/pssr.201105250",

language = "English",

volume = "5",

pages = "262--264",

journal = "Physica Status Solidi - Rapid Research Letters",

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T1 - Atomic layer deposition of TiO2 and Al-doped TiO2 films on Ir substrates for ultralow leakage currents

AU - Kim, Seong Keun

AU - Han, Sora

AU - Han, Jeong Hwan

AU - Lee, Woongkyu

AU - Hwang, Cheol Seong

PY - 2011/8

Y1 - 2011/8

N2 - TiO2 and Al-doped TiO2 (ATO) films were grown on Ir substrates by atomic layer deposition using O3 as the oxygen source. With increasing O3 feeding time, the crystalline structure of the TiO2 films was transformed from anatase to rutile. Above an O3 feeding time of 35 s, the films crystallized as only rutile due to the formation of IrO2 layer at the interface. The TiO2 and ATO films showed higher dielectric constants of 78 and 51, respectively. The films on Ir showed superior leakage properties compared to the films on Ru due to the high work-function of Ir.

AB - TiO2 and Al-doped TiO2 (ATO) films were grown on Ir substrates by atomic layer deposition using O3 as the oxygen source. With increasing O3 feeding time, the crystalline structure of the TiO2 films was transformed from anatase to rutile. Above an O3 feeding time of 35 s, the films crystallized as only rutile due to the formation of IrO2 layer at the interface. The TiO2 and ATO films showed higher dielectric constants of 78 and 51, respectively. The films on Ir showed superior leakage properties compared to the films on Ru due to the high work-function of Ir.

KW - Atomic layer deposition

KW - Iridium

KW - TiO

UR - http://www.scopus.com/inward/record.url?scp=79961083396&partnerID=8YFLogxK

U2 - 10.1002/pssr.201105250

DO - 10.1002/pssr.201105250

M3 - Article

AN - SCOPUS:79961083396

SN - 1862-6254

VL - 5

SP - 262

EP - 264

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 8

ER -

Atomic layer deposition of TiO₂ and Al-doped TiO₂ films on Ir substrates for ultralow leakage currents

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Keywords

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