Au/n-InP Schottky diodes using an Al2O3 interfacial layer grown by atomic layer deposition

Hogyoung Kim; Min Soo Kim; Seung Yu Yoon; Byung Joon Choi

doi:10.1088/1361-6641/32/2/025011

Au/n-InP Schottky diodes using an Al₂O₃ interfacial layer grown by atomic layer deposition

Hogyoung Kim
, Min Soo Kim
, Seung Yu Yoon
, Byung Joon Choi

Seoul National University of Science and Technology (SNUST)

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We investigated the effect of an Al₂O₃ interfacial layer grown by atomic layer deposition on the electrical properties of Au Schottky contacts to n-type InP. Considering barrier inhomogeneity, modified Richardson plots yielded a Richardson constant of 8.4 and 7.5 Acm^-2K^-2, respectively, for the sample with and without the Al₂O₃ interlayer (theoretical value of 9.4 Acm^-2K^-2 for n-type InP). The dominant reverse current flow for the sample with an Al₂O₃ interlayer was found to be Poole-Frenkel emission. From capacitance-voltage measurements, it was observed that the capacitance for the sample without the Al₂O₃ interlayer was frequency dependent. Sputter-induced defects as well as structural defects were passivated effectively with an Al₂O₃ interlayer.

Original language	English
Article number	025011
Journal	Semiconductor Science and Technology
Volume	32
Issue number	2
DOIs	https://doi.org/10.1088/1361-6641/32/2/025011
State	Published - 19 Jan 2017

Keywords

AlO interlayer
atomic layer deposition
defects

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10.1088/1361-6641/32/2/025011

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title = "Au/n-InP Schottky diodes using an Al2O3 interfacial layer grown by atomic layer deposition",

abstract = "We investigated the effect of an Al2O3 interfacial layer grown by atomic layer deposition on the electrical properties of Au Schottky contacts to n-type InP. Considering barrier inhomogeneity, modified Richardson plots yielded a Richardson constant of 8.4 and 7.5 Acm-2K-2, respectively, for the sample with and without the Al2O3 interlayer (theoretical value of 9.4 Acm-2K-2 for n-type InP). The dominant reverse current flow for the sample with an Al2O3 interlayer was found to be Poole-Frenkel emission. From capacitance-voltage measurements, it was observed that the capacitance for the sample without the Al2O3 interlayer was frequency dependent. Sputter-induced defects as well as structural defects were passivated effectively with an Al2O3 interlayer.",

keywords = "AlO interlayer, atomic layer deposition, defects",

author = "Hogyoung Kim and Kim, \{Min Soo\} and Yoon, \{Seung Yu\} and Choi, \{Byung Joon\}",

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doi = "10.1088/1361-6641/32/2/025011",

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TY - JOUR

T1 - Au/n-InP Schottky diodes using an Al2O3 interfacial layer grown by atomic layer deposition

AU - Kim, Hogyoung

AU - Kim, Min Soo

AU - Yoon, Seung Yu

AU - Choi, Byung Joon

PY - 2017/1/19

Y1 - 2017/1/19

N2 - We investigated the effect of an Al2O3 interfacial layer grown by atomic layer deposition on the electrical properties of Au Schottky contacts to n-type InP. Considering barrier inhomogeneity, modified Richardson plots yielded a Richardson constant of 8.4 and 7.5 Acm-2K-2, respectively, for the sample with and without the Al2O3 interlayer (theoretical value of 9.4 Acm-2K-2 for n-type InP). The dominant reverse current flow for the sample with an Al2O3 interlayer was found to be Poole-Frenkel emission. From capacitance-voltage measurements, it was observed that the capacitance for the sample without the Al2O3 interlayer was frequency dependent. Sputter-induced defects as well as structural defects were passivated effectively with an Al2O3 interlayer.

AB - We investigated the effect of an Al2O3 interfacial layer grown by atomic layer deposition on the electrical properties of Au Schottky contacts to n-type InP. Considering barrier inhomogeneity, modified Richardson plots yielded a Richardson constant of 8.4 and 7.5 Acm-2K-2, respectively, for the sample with and without the Al2O3 interlayer (theoretical value of 9.4 Acm-2K-2 for n-type InP). The dominant reverse current flow for the sample with an Al2O3 interlayer was found to be Poole-Frenkel emission. From capacitance-voltage measurements, it was observed that the capacitance for the sample without the Al2O3 interlayer was frequency dependent. Sputter-induced defects as well as structural defects were passivated effectively with an Al2O3 interlayer.

KW - AlO interlayer

KW - atomic layer deposition

KW - defects

UR - https://www.scopus.com/pages/publications/85011371584

U2 - 10.1088/1361-6641/32/2/025011

DO - 10.1088/1361-6641/32/2/025011

M3 - Article

AN - SCOPUS:85011371584

SN - 0268-1242

VL - 32

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 2

M1 - 025011

ER -

Au/n-InP Schottky diodes using an Al₂O₃ interfacial layer grown by atomic layer deposition

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