Back-end compatibility of bonding and thinning processes for a wafer-level 3D interconnect technology platform

S. Pozder; J. Q. Lu; Y. Kwon; S. Zollner; J. Yu; J. J. McMahon; T. S. Cale; K. Yu; R. J. Gutmann

Back-end compatibility of bonding and thinning processes for a wafer-level 3D interconnect technology platform

S. Pozder, J. Q. Lu, Y. Kwon, S. Zollner, J. Yu, J. J. McMahon, T. S. Cale, K. Yu, R. J. Gutmann

Dept. of Chemical and Biomolecular Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

28 Scopus citations

Abstract

A previously proposed wafer-level three-dimensional (3D) IC technology platform has been extensively evaluated for compatibility with conventional IC packaging. Results demonstrate that dielectric glue bonding using benzocyclobutene (BCB) is compatible with conventional wafer sawing techniques, and that the bond adhesion strength is unaffected by die-level autoclave and thermal shock testing. High resolution X-ray diffraction (HRXRD) results show that the stress levels in 70 nm or 140 nm thick silicon SOI layers had no appreciable change after BCB bonding and wafer thinning.

Original language	English
Title of host publication	Proceedings of the IEEE 2004 International Interconnect Technology Conference
Pages	102-104
Number of pages	3
State	Published - 2004
Event	Proceedings of the IEEE 2004 International Interconnect Technology Conference - Burlingame, CA, United States Duration: 7 Jun 2004 → 9 Jun 2004

Publication series

Name	Proceedings of the IEEE 2004 International Interconnect Technology Conference

Conference

Conference	Proceedings of the IEEE 2004 International Interconnect Technology Conference
Country/Territory	United States
City	Burlingame, CA
Period	7/06/04 → 9/06/04

Cite this

Pozder, S., Lu, J. Q., Kwon, Y., Zollner, S., Yu, J., McMahon, J. J., Cale, T. S., Yu, K., & Gutmann, R. J. (2004). Back-end compatibility of bonding and thinning processes for a wafer-level 3D interconnect technology platform. In Proceedings of the IEEE 2004 International Interconnect Technology Conference (pp. 102-104). (Proceedings of the IEEE 2004 International Interconnect Technology Conference).

@inproceedings{7b31ec2f7ca34268b17259bd02915619,

title = "Back-end compatibility of bonding and thinning processes for a wafer-level 3D interconnect technology platform",

abstract = "A previously proposed wafer-level three-dimensional (3D) IC technology platform has been extensively evaluated for compatibility with conventional IC packaging. Results demonstrate that dielectric glue bonding using benzocyclobutene (BCB) is compatible with conventional wafer sawing techniques, and that the bond adhesion strength is unaffected by die-level autoclave and thermal shock testing. High resolution X-ray diffraction (HRXRD) results show that the stress levels in 70 nm or 140 nm thick silicon SOI layers had no appreciable change after BCB bonding and wafer thinning.",

author = "S. Pozder and Lu, \{J. Q.\} and Y. Kwon and S. Zollner and J. Yu and McMahon, \{J. J.\} and Cale, \{T. S.\} and K. Yu and Gutmann, \{R. J.\}",

year = "2004",

language = "English",

isbn = "0780383087",

series = "Proceedings of the IEEE 2004 International Interconnect Technology Conference",

pages = "102--104",

booktitle = "Proceedings of the IEEE 2004 International Interconnect Technology Conference",

note = "Proceedings of the IEEE 2004 International Interconnect Technology Conference ; Conference date: 07-06-2004 Through 09-06-2004",

}

Pozder, S, Lu, JQ, Kwon, Y, Zollner, S, Yu, J, McMahon, JJ, Cale, TS, Yu, K & Gutmann, RJ 2004, Back-end compatibility of bonding and thinning processes for a wafer-level 3D interconnect technology platform. in Proceedings of the IEEE 2004 International Interconnect Technology Conference. Proceedings of the IEEE 2004 International Interconnect Technology Conference, pp. 102-104, Proceedings of the IEEE 2004 International Interconnect Technology Conference, Burlingame, CA, United States, 7/06/04.

Back-end compatibility of bonding and thinning processes for a wafer-level 3D interconnect technology platform. / Pozder, S.; Lu, J. Q.; Kwon, Y. et al.
Proceedings of the IEEE 2004 International Interconnect Technology Conference. 2004. p. 102-104 (Proceedings of the IEEE 2004 International Interconnect Technology Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Back-end compatibility of bonding and thinning processes for a wafer-level 3D interconnect technology platform

AU - Pozder, S.

AU - Lu, J. Q.

AU - Kwon, Y.

AU - Zollner, S.

AU - Yu, J.

AU - McMahon, J. J.

AU - Cale, T. S.

AU - Yu, K.

AU - Gutmann, R. J.

PY - 2004

Y1 - 2004

N2 - A previously proposed wafer-level three-dimensional (3D) IC technology platform has been extensively evaluated for compatibility with conventional IC packaging. Results demonstrate that dielectric glue bonding using benzocyclobutene (BCB) is compatible with conventional wafer sawing techniques, and that the bond adhesion strength is unaffected by die-level autoclave and thermal shock testing. High resolution X-ray diffraction (HRXRD) results show that the stress levels in 70 nm or 140 nm thick silicon SOI layers had no appreciable change after BCB bonding and wafer thinning.

AB - A previously proposed wafer-level three-dimensional (3D) IC technology platform has been extensively evaluated for compatibility with conventional IC packaging. Results demonstrate that dielectric glue bonding using benzocyclobutene (BCB) is compatible with conventional wafer sawing techniques, and that the bond adhesion strength is unaffected by die-level autoclave and thermal shock testing. High resolution X-ray diffraction (HRXRD) results show that the stress levels in 70 nm or 140 nm thick silicon SOI layers had no appreciable change after BCB bonding and wafer thinning.

UR - https://www.scopus.com/pages/publications/8644255165

M3 - Conference contribution

AN - SCOPUS:8644255165

SN - 0780383087

SN - 9780780383081

T3 - Proceedings of the IEEE 2004 International Interconnect Technology Conference

SP - 102

EP - 104

BT - Proceedings of the IEEE 2004 International Interconnect Technology Conference

T2 - Proceedings of the IEEE 2004 International Interconnect Technology Conference

Y2 - 7 June 2004 through 9 June 2004

ER -

Back-end compatibility of bonding and thinning processes for a wafer-level 3D interconnect technology platform

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Publication series

Conference

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