Abstract
The Pt/Ge Schottky junctions were fabricated with an atomic layer deposition (ALD)-grown ZnO interlayer (IL) and the interfacial properties of Pt/ZnO/Ge Schottky junctions were characterized. The forward current characteristics showed that the barrier height for Pt/ZnO/Ge junction was higher than that for the Pt/Ge junction, associated with the improved interfacial quality. The thermionic field emission model was a suitable transport mechanism for the reverse current characteristics for Pt/ZnO/Ge junction. High reverse current values for Pt/Ge junction would be due to the positive fixed charges and/or donor-like surface states. Higher barrier height and lower reverse leakage current indicate better Schottky diode characteristics for the Pt/ZnO/Ge junction. It could be inferred from the results that ALD-grown ZnO IL improved the interfacial quality of Pt/Ge Schottky junction.
| Original language | English |
|---|---|
| Pages (from-to) | 241-246 |
| Number of pages | 6 |
| Journal | Journal of the Korean Physical Society |
| Volume | 81 |
| Issue number | 3 |
| DOIs | |
| State | Published - Aug 2022 |
Keywords
- Interfacial quality
- Pt/Ge Schottky junctions
- Thermionic field emission
- ZnO interlayer