Barrier height enhancement in Pt/n-Ge Schottky junction with a ZnO interlayer prepared by atomic layer deposition

Hogyoung Kim; Myeong Jun Jung; Byung Joon Choi

doi:10.1007/s40042-022-00529-4

Barrier height enhancement in Pt/n-Ge Schottky junction with a ZnO interlayer prepared by atomic layer deposition

Hogyoung Kim, Myeong Jun Jung, Byung Joon Choi

Seoul National University of Science and Technology (SNUST)

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The Pt/Ge Schottky junctions were fabricated with an atomic layer deposition (ALD)-grown ZnO interlayer (IL) and the interfacial properties of Pt/ZnO/Ge Schottky junctions were characterized. The forward current characteristics showed that the barrier height for Pt/ZnO/Ge junction was higher than that for the Pt/Ge junction, associated with the improved interfacial quality. The thermionic field emission model was a suitable transport mechanism for the reverse current characteristics for Pt/ZnO/Ge junction. High reverse current values for Pt/Ge junction would be due to the positive fixed charges and/or donor-like surface states. Higher barrier height and lower reverse leakage current indicate better Schottky diode characteristics for the Pt/ZnO/Ge junction. It could be inferred from the results that ALD-grown ZnO IL improved the interfacial quality of Pt/Ge Schottky junction.

Original language	English
Pages (from-to)	241-246
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	81
Issue number	3
DOIs	https://doi.org/10.1007/s40042-022-00529-4
State	Published - Aug 2022

Keywords

Interfacial quality
Pt/Ge Schottky junctions
Thermionic field emission
ZnO interlayer

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10.1007/s40042-022-00529-4

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@article{6e074964ca4e43f8a7bfbc1bd22a82f8,

title = "Barrier height enhancement in Pt/n-Ge Schottky junction with a ZnO interlayer prepared by atomic layer deposition",

abstract = "The Pt/Ge Schottky junctions were fabricated with an atomic layer deposition (ALD)-grown ZnO interlayer (IL) and the interfacial properties of Pt/ZnO/Ge Schottky junctions were characterized. The forward current characteristics showed that the barrier height for Pt/ZnO/Ge junction was higher than that for the Pt/Ge junction, associated with the improved interfacial quality. The thermionic field emission model was a suitable transport mechanism for the reverse current characteristics for Pt/ZnO/Ge junction. High reverse current values for Pt/Ge junction would be due to the positive fixed charges and/or donor-like surface states. Higher barrier height and lower reverse leakage current indicate better Schottky diode characteristics for the Pt/ZnO/Ge junction. It could be inferred from the results that ALD-grown ZnO IL improved the interfacial quality of Pt/Ge Schottky junction.",

keywords = "Interfacial quality, Pt/Ge Schottky junctions, Thermionic field emission, ZnO interlayer",

author = "Hogyoung Kim and Jung, \{Myeong Jun\} and Choi, \{Byung Joon\}",

note = "Publisher Copyright: {\textcopyright} 2022, The Korean Physical Society.",

year = "2022",

month = aug,

doi = "10.1007/s40042-022-00529-4",

language = "English",

volume = "81",

pages = "241--246",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

number = "3",

}

TY - JOUR

T1 - Barrier height enhancement in Pt/n-Ge Schottky junction with a ZnO interlayer prepared by atomic layer deposition

AU - Kim, Hogyoung

AU - Jung, Myeong Jun

AU - Choi, Byung Joon

PY - 2022/8

Y1 - 2022/8

N2 - The Pt/Ge Schottky junctions were fabricated with an atomic layer deposition (ALD)-grown ZnO interlayer (IL) and the interfacial properties of Pt/ZnO/Ge Schottky junctions were characterized. The forward current characteristics showed that the barrier height for Pt/ZnO/Ge junction was higher than that for the Pt/Ge junction, associated with the improved interfacial quality. The thermionic field emission model was a suitable transport mechanism for the reverse current characteristics for Pt/ZnO/Ge junction. High reverse current values for Pt/Ge junction would be due to the positive fixed charges and/or donor-like surface states. Higher barrier height and lower reverse leakage current indicate better Schottky diode characteristics for the Pt/ZnO/Ge junction. It could be inferred from the results that ALD-grown ZnO IL improved the interfacial quality of Pt/Ge Schottky junction.

AB - The Pt/Ge Schottky junctions were fabricated with an atomic layer deposition (ALD)-grown ZnO interlayer (IL) and the interfacial properties of Pt/ZnO/Ge Schottky junctions were characterized. The forward current characteristics showed that the barrier height for Pt/ZnO/Ge junction was higher than that for the Pt/Ge junction, associated with the improved interfacial quality. The thermionic field emission model was a suitable transport mechanism for the reverse current characteristics for Pt/ZnO/Ge junction. High reverse current values for Pt/Ge junction would be due to the positive fixed charges and/or donor-like surface states. Higher barrier height and lower reverse leakage current indicate better Schottky diode characteristics for the Pt/ZnO/Ge junction. It could be inferred from the results that ALD-grown ZnO IL improved the interfacial quality of Pt/Ge Schottky junction.

KW - Interfacial quality

KW - Pt/Ge Schottky junctions

KW - Thermionic field emission

KW - ZnO interlayer

UR - https://www.scopus.com/pages/publications/85132823603

U2 - 10.1007/s40042-022-00529-4

DO - 10.1007/s40042-022-00529-4

M3 - Article

AN - SCOPUS:85132823603

SN - 0374-4884

VL - 81

SP - 241

EP - 246

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 3

ER -

Barrier height enhancement in Pt/n-Ge Schottky junction with a ZnO interlayer prepared by atomic layer deposition

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Keywords

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