TY - GEN
T1 - Benchmarking monolithic 3D integration for compute-in-memory accelerators
T2 - 66th Annual IEEE International Electron Devices Meeting, IEDM 2020
AU - Peng, Xiaochen
AU - Chakraborty, Wriddhi
AU - Kaul, Ankit
AU - Shim, Wonbo
AU - Bakir, Muhannad S.
AU - Datta, Suman
AU - Yu, Shimeng
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/12/12
Y1 - 2020/12/12
N2 - This paper presents 3D NeuroSim, a benchmark framework of monolithic 3D (M3D) integrated compute-in-memory (CIM) accelerators. To address the challenges of analog-to-digital converter (ADC) overhead and scaling limitations caused by high write voltage in emerging nonvolatile memory (eNVM), we propose partitioning the circuit modules in hybrid technology nodes across two stacked tiers with massive inter-tier vias. This framework features versatile back-end-of-line (BEOL)-compatible transistors, including laser-recrystallized silicon transistor and oxide transistor, and analyzes the thermal profile for M3D integration. Finally, we benchmark the CIM accelerators for VGG-8 on CIFAR-10 and reveal the substantial benefits in energy efficiency of a hybrid M3D architecture (45nm eNVM array+7nm ADC and logic).
AB - This paper presents 3D NeuroSim, a benchmark framework of monolithic 3D (M3D) integrated compute-in-memory (CIM) accelerators. To address the challenges of analog-to-digital converter (ADC) overhead and scaling limitations caused by high write voltage in emerging nonvolatile memory (eNVM), we propose partitioning the circuit modules in hybrid technology nodes across two stacked tiers with massive inter-tier vias. This framework features versatile back-end-of-line (BEOL)-compatible transistors, including laser-recrystallized silicon transistor and oxide transistor, and analyzes the thermal profile for M3D integration. Finally, we benchmark the CIM accelerators for VGG-8 on CIFAR-10 and reveal the substantial benefits in energy efficiency of a hybrid M3D architecture (45nm eNVM array+7nm ADC and logic).
UR - http://www.scopus.com/inward/record.url?scp=85102948945&partnerID=8YFLogxK
U2 - 10.1109/IEDM13553.2020.9372091
DO - 10.1109/IEDM13553.2020.9372091
M3 - Conference contribution
AN - SCOPUS:85102948945
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 30.4.1-30.4.4
BT - 2020 IEEE International Electron Devices Meeting, IEDM 2020
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 12 December 2020 through 18 December 2020
ER -
