TY - GEN
T1 - BEOL Compatible Oxide Power Transistors for On- Chip Voltage Conversion in Heterogenous 3D (H3D) Integrated Circuits
AU - Deng, Sunbin
AU - Kwak, Jungyoun
AU - Lee, Junmo
AU - Aabrar, Khandker Akif
AU - Kim, Tae Hyeon
AU - Choe, Gihun
AU - Kirtania, Sharadindu Gopal
AU - Zhang, Chengyang
AU - Li, Wantong
AU - Phadke, Omkar
AU - Yu, Shimeng
AU - Datta, Suman
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - To support vertical power delivery network (PDN) in heterogeneous 3-dimensional (H3D) integrated circuits with multi-tier stacking, we demonstrated high-voltage back-end-of- line (BEOL) compatible devices: tungsten-doped indium oxide (IWO) power transistors and high-breakdown voltage (VBD) superlattice MIM capacitors. The IWO power transistors have a VBD >12 V and a cutoff frequency of 1.5 GHz. Monolithic cointegration of enhancement(E)- and depletion(D)-mode transistors are demonstrated for high-side and low-side switches, respectively, to implement a switched-capacitor (SC) based DC- DC voltage converter. We further demonstrated on-chip superlattice capacitors for high VBD of ~11.2 V. Using calibrated measurement data from fabricated devices, a BEOL compatible DC-DC converter was designed to demonstrate efficient voltage conversion in a multi-tier H3D transformer accelerator with multiple domains: logic (0.75 V), eDRAM (1.5 V), and ferroelectric transistor (FeFET) non-volatile memory (3 V).
AB - To support vertical power delivery network (PDN) in heterogeneous 3-dimensional (H3D) integrated circuits with multi-tier stacking, we demonstrated high-voltage back-end-of- line (BEOL) compatible devices: tungsten-doped indium oxide (IWO) power transistors and high-breakdown voltage (VBD) superlattice MIM capacitors. The IWO power transistors have a VBD >12 V and a cutoff frequency of 1.5 GHz. Monolithic cointegration of enhancement(E)- and depletion(D)-mode transistors are demonstrated for high-side and low-side switches, respectively, to implement a switched-capacitor (SC) based DC- DC voltage converter. We further demonstrated on-chip superlattice capacitors for high VBD of ~11.2 V. Using calibrated measurement data from fabricated devices, a BEOL compatible DC-DC converter was designed to demonstrate efficient voltage conversion in a multi-tier H3D transformer accelerator with multiple domains: logic (0.75 V), eDRAM (1.5 V), and ferroelectric transistor (FeFET) non-volatile memory (3 V).
UR - https://www.scopus.com/pages/publications/85185604341
U2 - 10.1109/IEDM45741.2023.10413838
DO - 10.1109/IEDM45741.2023.10413838
M3 - Conference contribution
AN - SCOPUS:85185604341
T3 - Technical Digest - International Electron Devices Meeting, IEDM
BT - 2023 International Electron Devices Meeting, IEDM 2023
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2023 International Electron Devices Meeting, IEDM 2023
Y2 - 9 December 2023 through 13 December 2023
ER -