TY - JOUR
T1 - Bit-width reduction in write counters for wear leveling in a phase-change memory system
AU - Lee, Hyokeun
AU - Jung, Hyunmin
AU - Lee, Hyuk Jae
AU - Kim, Hyun
N1 - Publisher Copyright:
Copyrights © 2020 The Institute of Electronics and Information Engineers
PY - 2020/10/30
Y1 - 2020/10/30
N2 - Phase-change memory (PCM) has garnered attention as a next-generation memory owing to its non-volatility and scalability. However, PCM wears out under excessive write accesses; hence, it must be supported by wear-leveling algorithms to uniformly distribute the number of accesses across the entire address space. Table-based wear leveling is one of the representative algorithms that stores a write counter for each address region for remapping frequently accessed addresses with lower overhead; however, write counters consume resources in a PCM system. In this study, a bit-width reduction method in write counters for wear leveling is proposed, where the method utilizes a stochastic finite-state machine to probabilistically count the number of write accesses. The proposed method shows only a 1.2% lifetime degradation using six bits for each counter, with 40% fewer resources spent on write counters when the endurance of a 4KB block is 1E+06.
AB - Phase-change memory (PCM) has garnered attention as a next-generation memory owing to its non-volatility and scalability. However, PCM wears out under excessive write accesses; hence, it must be supported by wear-leveling algorithms to uniformly distribute the number of accesses across the entire address space. Table-based wear leveling is one of the representative algorithms that stores a write counter for each address region for remapping frequently accessed addresses with lower overhead; however, write counters consume resources in a PCM system. In this study, a bit-width reduction method in write counters for wear leveling is proposed, where the method utilizes a stochastic finite-state machine to probabilistically count the number of write accesses. The proposed method shows only a 1.2% lifetime degradation using six bits for each counter, with 40% fewer resources spent on write counters when the endurance of a 4KB block is 1E+06.
KW - Finite-state machine
KW - Non-volatile memory
KW - Phase-change memory
KW - Wear leveling
UR - https://www.scopus.com/pages/publications/85097240795
U2 - 10.5573/IEIESPC.2020.9.5.413
DO - 10.5573/IEIESPC.2020.9.5.413
M3 - Article
AN - SCOPUS:85097240795
SN - 2287-5255
VL - 9
SP - 413
EP - 419
JO - IEIE Transactions on Smart Processing and Computing
JF - IEIE Transactions on Smart Processing and Computing
IS - 5
ER -