Bit-width reduction in write counters for wear leveling in a phase-change memory system

Hyokeun Lee, Hyunmin Jung, Hyuk Jae Lee, Hyun Kim

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Phase-change memory (PCM) has garnered attention as a next-generation memory owing to its non-volatility and scalability. However, PCM wears out under excessive write accesses; hence, it must be supported by wear-leveling algorithms to uniformly distribute the number of accesses across the entire address space. Table-based wear leveling is one of the representative algorithms that stores a write counter for each address region for remapping frequently accessed addresses with lower overhead; however, write counters consume resources in a PCM system. In this study, a bit-width reduction method in write counters for wear leveling is proposed, where the method utilizes a stochastic finite-state machine to probabilistically count the number of write accesses. The proposed method shows only a 1.2% lifetime degradation using six bits for each counter, with 40% fewer resources spent on write counters when the endurance of a 4KB block is 1E+06.

Original languageEnglish
Pages (from-to)413-419
Number of pages7
JournalIEIE Transactions on Smart Processing and Computing
Volume9
Issue number5
DOIs
StatePublished - 30 Oct 2020

Keywords

  • Finite-state machine
  • Non-volatile memory
  • Phase-change memory
  • Wear leveling

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