TY - JOUR
T1 - Bonding characterization of oxidized PDMS thin films
AU - McMahon, J. J.
AU - Kwon, Y.
AU - Lu, J. Q.
AU - Cale, T. S.
AU - Gutmann, R. J.
PY - 2003
Y1 - 2003
N2 - This paper reports on the use of poly(dimethylsiloxane) (PDMS) thin films to bond pairs of glass slides, borosilicate glass, and silicon substrates, with an emphasis on application for wafer-level three-dimensional (3D) heterogeneous integration technology platforms. PDMS films were spin-cast and cured, surface modified using low power oxygen plasma, and then bonded to various materials. These bonds were destructively tested using a four point bending technique. The critical adhesion energy obtained using surface modified PDMS to bond glass slides is 3.0 J/m2. Adhesion energies obtained using unmodified PDMS are 2.8, 1.8, and 1.6 J/m2 for bonded silicon, glass slides, and borosilicate glass, respectively. Correlation of these results to material surface and interface properties indicates that although PDMS has process advantages as a bonding material for heterogeneous integration, its adhesion strength is lower than that of other dielectric bonding glues.
AB - This paper reports on the use of poly(dimethylsiloxane) (PDMS) thin films to bond pairs of glass slides, borosilicate glass, and silicon substrates, with an emphasis on application for wafer-level three-dimensional (3D) heterogeneous integration technology platforms. PDMS films were spin-cast and cured, surface modified using low power oxygen plasma, and then bonded to various materials. These bonds were destructively tested using a four point bending technique. The critical adhesion energy obtained using surface modified PDMS to bond glass slides is 3.0 J/m2. Adhesion energies obtained using unmodified PDMS are 2.8, 1.8, and 1.6 J/m2 for bonded silicon, glass slides, and borosilicate glass, respectively. Correlation of these results to material surface and interface properties indicates that although PDMS has process advantages as a bonding material for heterogeneous integration, its adhesion strength is lower than that of other dielectric bonding glues.
UR - http://www.scopus.com/inward/record.url?scp=2442612882&partnerID=8YFLogxK
U2 - 10.1557/proc-795-u8.3
DO - 10.1557/proc-795-u8.3
M3 - Conference article
AN - SCOPUS:2442612882
SN - 0272-9172
VL - 795
SP - 99
EP - 104
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Thin Films - Stresses and Mechanical Properties X
Y2 - 1 December 2003 through 5 December 2003
ER -