Bonding characterization of oxidized PDMS thin films

J. J. McMahon; Y. Kwon; J. Q. Lu; T. S. Cale; R. J. Gutmann

doi:10.1557/proc-795-u8.3

Bonding characterization of oxidized PDMS thin films

J. J. McMahon, Y. Kwon, J. Q. Lu, T. S. Cale, R. J. Gutmann

Dept. of Chemical and Biomolecular Engineering

Rensselaer Polytechnic Institute

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

This paper reports on the use of poly(dimethylsiloxane) (PDMS) thin films to bond pairs of glass slides, borosilicate glass, and silicon substrates, with an emphasis on application for wafer-level three-dimensional (3D) heterogeneous integration technology platforms. PDMS films were spin-cast and cured, surface modified using low power oxygen plasma, and then bonded to various materials. These bonds were destructively tested using a four point bending technique. The critical adhesion energy obtained using surface modified PDMS to bond glass slides is 3.0 J/m². Adhesion energies obtained using unmodified PDMS are 2.8, 1.8, and 1.6 J/m² for bonded silicon, glass slides, and borosilicate glass, respectively. Correlation of these results to material surface and interface properties indicates that although PDMS has process advantages as a bonding material for heterogeneous integration, its adhesion strength is lower than that of other dielectric bonding glues.

Original language	English
Pages (from-to)	99-104
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	795
DOIs	https://doi.org/10.1557/proc-795-u8.3
State	Published - 2003
Event	Thin Films - Stresses and Mechanical Properties X - Boston, MA., United States Duration: 1 Dec 2003 → 5 Dec 2003

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title = "Bonding characterization of oxidized PDMS thin films",

abstract = "This paper reports on the use of poly(dimethylsiloxane) (PDMS) thin films to bond pairs of glass slides, borosilicate glass, and silicon substrates, with an emphasis on application for wafer-level three-dimensional (3D) heterogeneous integration technology platforms. PDMS films were spin-cast and cured, surface modified using low power oxygen plasma, and then bonded to various materials. These bonds were destructively tested using a four point bending technique. The critical adhesion energy obtained using surface modified PDMS to bond glass slides is 3.0 J/m2. Adhesion energies obtained using unmodified PDMS are 2.8, 1.8, and 1.6 J/m2 for bonded silicon, glass slides, and borosilicate glass, respectively. Correlation of these results to material surface and interface properties indicates that although PDMS has process advantages as a bonding material for heterogeneous integration, its adhesion strength is lower than that of other dielectric bonding glues.",

author = "McMahon, \{J. J.\} and Y. Kwon and Lu, \{J. Q.\} and Cale, \{T. S.\} and Gutmann, \{R. J.\}",

year = "2003",

doi = "10.1557/proc-795-u8.3",

language = "English",

volume = "795",

pages = "99--104",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Thin Films - Stresses and Mechanical Properties X ; Conference date: 01-12-2003 Through 05-12-2003",

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TY - JOUR

T1 - Bonding characterization of oxidized PDMS thin films

AU - McMahon, J. J.

AU - Kwon, Y.

AU - Lu, J. Q.

AU - Cale, T. S.

AU - Gutmann, R. J.

PY - 2003

Y1 - 2003

N2 - This paper reports on the use of poly(dimethylsiloxane) (PDMS) thin films to bond pairs of glass slides, borosilicate glass, and silicon substrates, with an emphasis on application for wafer-level three-dimensional (3D) heterogeneous integration technology platforms. PDMS films were spin-cast and cured, surface modified using low power oxygen plasma, and then bonded to various materials. These bonds were destructively tested using a four point bending technique. The critical adhesion energy obtained using surface modified PDMS to bond glass slides is 3.0 J/m2. Adhesion energies obtained using unmodified PDMS are 2.8, 1.8, and 1.6 J/m2 for bonded silicon, glass slides, and borosilicate glass, respectively. Correlation of these results to material surface and interface properties indicates that although PDMS has process advantages as a bonding material for heterogeneous integration, its adhesion strength is lower than that of other dielectric bonding glues.

AB - This paper reports on the use of poly(dimethylsiloxane) (PDMS) thin films to bond pairs of glass slides, borosilicate glass, and silicon substrates, with an emphasis on application for wafer-level three-dimensional (3D) heterogeneous integration technology platforms. PDMS films were spin-cast and cured, surface modified using low power oxygen plasma, and then bonded to various materials. These bonds were destructively tested using a four point bending technique. The critical adhesion energy obtained using surface modified PDMS to bond glass slides is 3.0 J/m2. Adhesion energies obtained using unmodified PDMS are 2.8, 1.8, and 1.6 J/m2 for bonded silicon, glass slides, and borosilicate glass, respectively. Correlation of these results to material surface and interface properties indicates that although PDMS has process advantages as a bonding material for heterogeneous integration, its adhesion strength is lower than that of other dielectric bonding glues.

UR - https://www.scopus.com/pages/publications/2442612882

U2 - 10.1557/proc-795-u8.3

DO - 10.1557/proc-795-u8.3

M3 - Conference article

AN - SCOPUS:2442612882

SN - 0272-9172

VL - 795

SP - 99

EP - 104

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Thin Films - Stresses and Mechanical Properties X

Y2 - 1 December 2003 through 5 December 2003

ER -

Bonding characterization of oxidized PDMS thin films

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