Abstract
Using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements, the electrical properties of Cu/ n-InP Schottky diodes were investigated. The values of C and G/ω were found to decrease with increasing frequency. The presence of interface states might cause excess capacitance, leading to frequency dispersion. The negative capacitance was observed under a forward bias voltage, which may be due to contact injection, interface states or minority-carrier injection. The barrier heights from C-V measurements were found to depend on the frequency. In particular, the barrier height at 200 kHz was found to be 0.65 eV, which was similar to the flat band barrier height of 0.66 eV.
| Original language | English |
|---|---|
| Pages (from-to) | 293-296 |
| Number of pages | 4 |
| Journal | Transactions on Electrical and Electronic Materials |
| Volume | 17 |
| Issue number | 5 |
| DOIs | |
| State | Published - Oct 2016 |
Keywords
- Capacitance
- InP
- Interface states
Fingerprint
Dive into the research topics of 'Capacitance-voltage (C-V) characteristics of Cu/n-type InP schottky diodes'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver