Characteristics of NEMS piezoresistive silicon nanowires pressure sensors with various diaphragm layers

Liang Lou; Songsong Zhang; Lishiah Lim; Woo Tae Park; Hanhua Feng; Dim Lee Kwong; Chengkuo Lee

doi:10.1016/j.proeng.2011.12.354

Characteristics of NEMS piezoresistive silicon nanowires pressure sensors with various diaphragm layers

Liang Lou
, Songsong Zhang
, Lishiah Lim
, Woo Tae Park
, Hanhua Feng
, Dim Lee Kwong
, Chengkuo Lee

Dept. of Mechanical Engineering

National University of Singapore
Agency for Science, Technology and Research, Singapore

Research output: Contribution to journal › Conference article › peer-review

10 Scopus citations

Abstract

Optimized diaphragm structures comprising silicon nitride (SiNx) film integrated with piezoresistive silicon nanowires (SiNW) are characterized for nanoelectromechanical system (NEMS) pressure sensors. Several improvements are done in comparison with our previously reported device [1]. Firstly, p-type SiNWs of 1 μm with 1E14 implantation instead of 10 μm 1E13 implantation are adopted to gain more uniform stress and show better linearity. Secondly, by using SiO ₂+SiNx bi-layer film instead of pure SiO ₂ film, the membrane is not only flat, but also toughened to be able to withstand pressure up to 40 atm. Finally, the real test shows that the sensitivity of pressure sensor is doubled by thinning down the SiNx film to half thickness.

Original language	English
Pages (from-to)	1433-1436
Number of pages	4
Journal	Procedia Engineering
Volume	25
DOIs	https://doi.org/10.1016/j.proeng.2011.12.354
State	Published - 2011
Event	25th Eurosensors Conference - Athens, Greece Duration: 4 Sep 2011 → 7 Sep 2011

Keywords

Diaphragm
Nano-electro-mechanical systems (NEMS)
Piezoresistive silicon nanowire
Pressure sensor
Thin film

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10.1016/j.proeng.2011.12.354

Cite this

@article{a6d6af660bab40e2927f07d6974ff0a8,

title = "Characteristics of NEMS piezoresistive silicon nanowires pressure sensors with various diaphragm layers",

abstract = "Optimized diaphragm structures comprising silicon nitride (SiNx) film integrated with piezoresistive silicon nanowires (SiNW) are characterized for nanoelectromechanical system (NEMS) pressure sensors. Several improvements are done in comparison with our previously reported device [1]. Firstly, p-type SiNWs of 1 μm with 1E14 implantation instead of 10 μm 1E13 implantation are adopted to gain more uniform stress and show better linearity. Secondly, by using SiO 2+SiNx bi-layer film instead of pure SiO 2 film, the membrane is not only flat, but also toughened to be able to withstand pressure up to 40 atm. Finally, the real test shows that the sensitivity of pressure sensor is doubled by thinning down the SiNx film to half thickness.",

keywords = "Diaphragm, Nano-electro-mechanical systems (NEMS), Piezoresistive silicon nanowire, Pressure sensor, Thin film",

author = "Liang Lou and Songsong Zhang and Lishiah Lim and Park, \{Woo Tae\} and Hanhua Feng and Kwong, \{Dim Lee\} and Chengkuo Lee",

year = "2011",

doi = "10.1016/j.proeng.2011.12.354",

language = "English",

volume = "25",

pages = "1433--1436",

journal = "Procedia Engineering",

issn = "1877-7058",

note = "25th Eurosensors Conference ; Conference date: 04-09-2011 Through 07-09-2011",

}

TY - JOUR

T1 - Characteristics of NEMS piezoresistive silicon nanowires pressure sensors with various diaphragm layers

AU - Lou, Liang

AU - Zhang, Songsong

AU - Lim, Lishiah

AU - Park, Woo Tae

AU - Feng, Hanhua

AU - Kwong, Dim Lee

AU - Lee, Chengkuo

PY - 2011

Y1 - 2011

N2 - Optimized diaphragm structures comprising silicon nitride (SiNx) film integrated with piezoresistive silicon nanowires (SiNW) are characterized for nanoelectromechanical system (NEMS) pressure sensors. Several improvements are done in comparison with our previously reported device [1]. Firstly, p-type SiNWs of 1 μm with 1E14 implantation instead of 10 μm 1E13 implantation are adopted to gain more uniform stress and show better linearity. Secondly, by using SiO 2+SiNx bi-layer film instead of pure SiO 2 film, the membrane is not only flat, but also toughened to be able to withstand pressure up to 40 atm. Finally, the real test shows that the sensitivity of pressure sensor is doubled by thinning down the SiNx film to half thickness.

AB - Optimized diaphragm structures comprising silicon nitride (SiNx) film integrated with piezoresistive silicon nanowires (SiNW) are characterized for nanoelectromechanical system (NEMS) pressure sensors. Several improvements are done in comparison with our previously reported device [1]. Firstly, p-type SiNWs of 1 μm with 1E14 implantation instead of 10 μm 1E13 implantation are adopted to gain more uniform stress and show better linearity. Secondly, by using SiO 2+SiNx bi-layer film instead of pure SiO 2 film, the membrane is not only flat, but also toughened to be able to withstand pressure up to 40 atm. Finally, the real test shows that the sensitivity of pressure sensor is doubled by thinning down the SiNx film to half thickness.

KW - Diaphragm

KW - Nano-electro-mechanical systems (NEMS)

KW - Piezoresistive silicon nanowire

KW - Pressure sensor

KW - Thin film

UR - https://www.scopus.com/pages/publications/84863155012

U2 - 10.1016/j.proeng.2011.12.354

DO - 10.1016/j.proeng.2011.12.354

M3 - Conference article

AN - SCOPUS:84863155012

SN - 1877-7058

VL - 25

SP - 1433

EP - 1436

JO - Procedia Engineering

JF - Procedia Engineering

T2 - 25th Eurosensors Conference

Y2 - 4 September 2011 through 7 September 2011

ER -

Characteristics of NEMS piezoresistive silicon nanowires pressure sensors with various diaphragm layers

Abstract

Keywords

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