Characterization and Optimization of SiCN Films for Low-Temperature Cu Hybrid Bonding

Yeonju Kim, Jongkyung Park

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

As Moore's Law approaches its physical limits, this study explores SiCN's potential as a superior alternative to SiO2 for low-temperature hybrid bonding in 3D integration. We analyze SiCN films deposited at 180°C and 350°C to achieve defect-free interfaces comparable to those in higher-temperature processes. This helps reduce the thermal budget and prevent device degradation. Additionally, we employ O2 plasma treatments to lower the bonding temperature to 180°C further. The research ultimately aims to establish SiCN-SiCN low-temperature hybrid bonding as a viable and effective solution for next-generation semiconductor applications.

Original languageEnglish
Title of host publicationProceedings - 19th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2024
PublisherIEEE Computer Society
Pages374-377
Number of pages4
ISBN (Electronic)9798331532246
DOIs
StatePublished - 2024
Event19th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2024 - Taipei, Taiwan, Province of China
Duration: 22 Oct 202425 Oct 2024

Publication series

NameProceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT
ISSN (Print)2150-5934
ISSN (Electronic)2150-5942

Conference

Conference19th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2024
Country/TerritoryTaiwan, Province of China
CityTaipei
Period22/10/2425/10/24

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