Characterization of morphology controlled Fluorine-doped tin oxide thin films

Ha Rim An; Hyo Jin Ahn

doi:10.4028/www.scientific.net/AMR.922.23

Characterization of morphology controlled Fluorine-doped tin oxide thin films

Ha Rim An, Hyo Jin Ahn

Dept. of Materials Science & Engineering

Seoul National University of Science and Technology (SNUST)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We controlled morphologies of F-doped SnO₂ (FTO) thin films via an electrochemical method. To obtain rough and porous surface of the FTO thin films, a potentiostat/galvanostat was used. Field-emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) were employed to demonstrate the morphological changes of FTO surface. The electrical and optical properties of the FTO thin films were analyzed using Hall effect measurement system and UV-vis spectrophotometry. Also, morphology controlled the FTO thin films would be applied to dye-sensitized solar cells.

Original language	English
Title of host publication	THERMEC 2013 Supplement
Publisher	Trans Tech Publications
Pages	23-24
Number of pages	2
ISBN (Print)	9783038350743
DOIs	https://doi.org/10.4028/www.scientific.net/AMR.922.23
State	Published - 2014
Event	8th International Conference on Processing and Manufacturing of Advanced Materials: Processing, Fabrication, Properties, Applications, THERMEC 2013 - Las Vegas, NV, United States Duration: 2 Dec 2013 → 6 Dec 2013

Publication series

Name	Advanced Materials Research
Volume	922
ISSN (Print)	1022-6680

Conference

Conference	8th International Conference on Processing and Manufacturing of Advanced Materials: Processing, Fabrication, Properties, Applications, THERMEC 2013
Country/Territory	United States
City	Las Vegas, NV
Period	2/12/13 → 6/12/13

Keywords

Electrical and optical properties
Morphology control
Surface

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.4028/www.scientific.net/AMR.922.23

Cite this

@inproceedings{b4539b8c9e5d46a58f2299053e7e67d2,

title = "Characterization of morphology controlled Fluorine-doped tin oxide thin films",

abstract = "We controlled morphologies of F-doped SnO2 (FTO) thin films via an electrochemical method. To obtain rough and porous surface of the FTO thin films, a potentiostat/galvanostat was used. Field-emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) were employed to demonstrate the morphological changes of FTO surface. The electrical and optical properties of the FTO thin films were analyzed using Hall effect measurement system and UV-vis spectrophotometry. Also, morphology controlled the FTO thin films would be applied to dye-sensitized solar cells.",

keywords = "Electrical and optical properties, Morphology control, Surface",

author = "An, \{Ha Rim\} and Ahn, \{Hyo Jin\}",

year = "2014",

doi = "10.4028/www.scientific.net/AMR.922.23",

language = "English",

isbn = "9783038350743",

series = "Advanced Materials Research",

publisher = "Trans Tech Publications",

pages = "23--24",

booktitle = "THERMEC 2013 Supplement",

note = "8th International Conference on Processing and Manufacturing of Advanced Materials: Processing, Fabrication, Properties, Applications, THERMEC 2013 ; Conference date: 02-12-2013 Through 06-12-2013",

}

An, HR & Ahn, HJ 2014, Characterization of morphology controlled Fluorine-doped tin oxide thin films. in THERMEC 2013 Supplement. Advanced Materials Research, vol. 922, Trans Tech Publications, pp. 23-24, 8th International Conference on Processing and Manufacturing of Advanced Materials: Processing, Fabrication, Properties, Applications, THERMEC 2013, Las Vegas, NV, United States, 2/12/13. https://doi.org/10.4028/www.scientific.net/AMR.922.23

TY - GEN

T1 - Characterization of morphology controlled Fluorine-doped tin oxide thin films

AU - An, Ha Rim

AU - Ahn, Hyo Jin

PY - 2014

Y1 - 2014

N2 - We controlled morphologies of F-doped SnO2 (FTO) thin films via an electrochemical method. To obtain rough and porous surface of the FTO thin films, a potentiostat/galvanostat was used. Field-emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) were employed to demonstrate the morphological changes of FTO surface. The electrical and optical properties of the FTO thin films were analyzed using Hall effect measurement system and UV-vis spectrophotometry. Also, morphology controlled the FTO thin films would be applied to dye-sensitized solar cells.

AB - We controlled morphologies of F-doped SnO2 (FTO) thin films via an electrochemical method. To obtain rough and porous surface of the FTO thin films, a potentiostat/galvanostat was used. Field-emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) were employed to demonstrate the morphological changes of FTO surface. The electrical and optical properties of the FTO thin films were analyzed using Hall effect measurement system and UV-vis spectrophotometry. Also, morphology controlled the FTO thin films would be applied to dye-sensitized solar cells.

KW - Electrical and optical properties

KW - Morphology control

KW - Surface

UR - http://www.scopus.com/inward/record.url?scp=84901501136&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/AMR.922.23

DO - 10.4028/www.scientific.net/AMR.922.23

M3 - Conference contribution

AN - SCOPUS:84901501136

SN - 9783038350743

T3 - Advanced Materials Research

SP - 23

EP - 24

BT - THERMEC 2013 Supplement

PB - Trans Tech Publications

T2 - 8th International Conference on Processing and Manufacturing of Advanced Materials: Processing, Fabrication, Properties, Applications, THERMEC 2013

Y2 - 2 December 2013 through 6 December 2013

ER -

Characterization of morphology controlled Fluorine-doped tin oxide thin films

Abstract

Publication series

Conference

Keywords

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this