TY - GEN
T1 - Characterization of Nitride Passivated Cu Surface for Low-Temperature Cu-Cu Bonding
AU - Park, Hae Sung
AU - Seo, Han Kyeol
AU - Kim, Sarah Eunkyung
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/10
Y1 - 2019/10
N2 - Copper nitride passivated surface has been characterized and optimized by the design of experiment (DOE) technique with the aim of low-Temperature (300°C) Cu-Cu bonding. In order to generate an oxidation-free surface prior to Cu-Cu bonding process, N2 plasma treatment was performed on Cu surface followed by Cu surface activation and cleaning by Ar plasma in the same conventional DC sputter chamber. In this study, N2 plasma treatment conditions were optimized using the response surface methodology (RSM) based on central composite design (CCD) in DOE. The chemical states of nitride passivated Cu surface were analyzed by XPS profiles and then, several meaningful peak areas of each element were calculated by a deconvolution technique. These peak areas and surface roughness by AFM were used as the input values for the response optimization process. Cu-Cu bonded interface quality using optimized plasma conditions at low-Temperature (300°C) has been significantly improved and it shows this research has great potential for Cu-Cu bonding in mass production.
AB - Copper nitride passivated surface has been characterized and optimized by the design of experiment (DOE) technique with the aim of low-Temperature (300°C) Cu-Cu bonding. In order to generate an oxidation-free surface prior to Cu-Cu bonding process, N2 plasma treatment was performed on Cu surface followed by Cu surface activation and cleaning by Ar plasma in the same conventional DC sputter chamber. In this study, N2 plasma treatment conditions were optimized using the response surface methodology (RSM) based on central composite design (CCD) in DOE. The chemical states of nitride passivated Cu surface were analyzed by XPS profiles and then, several meaningful peak areas of each element were calculated by a deconvolution technique. These peak areas and surface roughness by AFM were used as the input values for the response optimization process. Cu-Cu bonded interface quality using optimized plasma conditions at low-Temperature (300°C) has been significantly improved and it shows this research has great potential for Cu-Cu bonding in mass production.
KW - Ar-N plasma treatment
KW - Cu-Cu bonding
KW - Low-Temperature bonding
KW - Nitride passivation
KW - Response Surface Methodology (RSM)
UR - http://www.scopus.com/inward/record.url?scp=85084110274&partnerID=8YFLogxK
U2 - 10.1109/3DIC48104.2019.9058774
DO - 10.1109/3DIC48104.2019.9058774
M3 - Conference contribution
AN - SCOPUS:85084110274
T3 - IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019
BT - IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 IEEE International 3D Systems Integration Conference, 3DIC 2019
Y2 - 8 October 2019 through 10 October 2019
ER -