Characterization of Pt/a-plane GaN Schottky contacts using conductive atomic force microscopy

Soo Hyon Phark; Hogyoung Kim; Keun Man Song; Phil Geun Kang; Heung Soo Shin; Dong Wook Kim

doi:10.1166/jnn.2011.3396

Characterization of Pt/a-plane GaN Schottky contacts using conductive atomic force microscopy

Soo Hyon Phark
, Hogyoung Kim
, Keun Man Song
, Phil Geun Kang
, Heung Soo Shin
, Dong Wook Kim

Dept. of Optometry

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We investigated the local electrical properties of Pt Schottky contacts to a-plane n-type GaN using conductive atomic force microscopy (C-AFM). Current-voltage characteristics obtained by C-AFM showed rectifying properties, indicating nano-scale Schottky junction formation. Two-dimensional current maps revealed that the surface microstructures of GaN influenced transport properties of the junctions.

Original language	English
Pages (from-to)	1413-1416
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	11
Issue number	2
DOIs	https://doi.org/10.1166/jnn.2011.3396
State	Published - Feb 2011

Keywords

Conductive atomic force microscopy
GaN
Schottky junction

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10.1166/jnn.2011.3396

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abstract = "We investigated the local electrical properties of Pt Schottky contacts to a-plane n-type GaN using conductive atomic force microscopy (C-AFM). Current-voltage characteristics obtained by C-AFM showed rectifying properties, indicating nano-scale Schottky junction formation. Two-dimensional current maps revealed that the surface microstructures of GaN influenced transport properties of the junctions.",

keywords = "Conductive atomic force microscopy, GaN, Schottky junction",

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AU - Song, Keun Man

AU - Kang, Phil Geun

AU - Shin, Heung Soo

AU - Kim, Dong Wook

PY - 2011/2

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AB - We investigated the local electrical properties of Pt Schottky contacts to a-plane n-type GaN using conductive atomic force microscopy (C-AFM). Current-voltage characteristics obtained by C-AFM showed rectifying properties, indicating nano-scale Schottky junction formation. Two-dimensional current maps revealed that the surface microstructures of GaN influenced transport properties of the junctions.

KW - Conductive atomic force microscopy

KW - GaN

KW - Schottky junction

UR - https://www.scopus.com/pages/publications/84863045055

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DO - 10.1166/jnn.2011.3396

M3 - Article

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Characterization of Pt/a-plane GaN Schottky contacts using conductive atomic force microscopy

Abstract

Keywords

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