Characterization of Pt/a-plane GaN Schottky contacts using conductive atomic force microscopy

Soo Hyon Phark; Hogyoung Kim; Keun Man Song; Phil Geun Kang; Heung Soo Shin; Dong Wook Kim

doi:10.1166/jnn.2011.3396

Characterization of Pt/a-plane GaN Schottky contacts using conductive atomic force microscopy

Soo Hyon Phark, Hogyoung Kim, Keun Man Song, Phil Geun Kang, Heung Soo Shin, Dong Wook Kim

Dept. of Optometry

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We investigated the local electrical properties of Pt Schottky contacts to a-plane n-type GaN using conductive atomic force microscopy (C-AFM). Current-voltage characteristics obtained by C-AFM showed rectifying properties, indicating nano-scale Schottky junction formation. Two-dimensional current maps revealed that the surface microstructures of GaN influenced transport properties of the junctions.

Original language	English
Pages (from-to)	1413-1416
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	11
Issue number	2
DOIs	https://doi.org/10.1166/jnn.2011.3396
State	Published - Feb 2011

Keywords

Conductive atomic force microscopy
GaN
Schottky junction

Access to Document

10.1166/jnn.2011.3396

Cite this

@article{ae9fcedf56cf464a95163bebbd6be62c,

title = "Characterization of Pt/a-plane GaN Schottky contacts using conductive atomic force microscopy",

abstract = "We investigated the local electrical properties of Pt Schottky contacts to a-plane n-type GaN using conductive atomic force microscopy (C-AFM). Current-voltage characteristics obtained by C-AFM showed rectifying properties, indicating nano-scale Schottky junction formation. Two-dimensional current maps revealed that the surface microstructures of GaN influenced transport properties of the junctions.",

keywords = "Conductive atomic force microscopy, GaN, Schottky junction",

author = "Phark, \{Soo Hyon\} and Hogyoung Kim and Song, \{Keun Man\} and Kang, \{Phil Geun\} and Shin, \{Heung Soo\} and Kim, \{Dong Wook\}",

year = "2011",

month = feb,

doi = "10.1166/jnn.2011.3396",

language = "English",

volume = "11",

pages = "1413--1416",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "ASP",

number = "2",

}

TY - JOUR

T1 - Characterization of Pt/a-plane GaN Schottky contacts using conductive atomic force microscopy

AU - Phark, Soo Hyon

AU - Kim, Hogyoung

AU - Song, Keun Man

AU - Kang, Phil Geun

AU - Shin, Heung Soo

AU - Kim, Dong Wook

PY - 2011/2

Y1 - 2011/2

N2 - We investigated the local electrical properties of Pt Schottky contacts to a-plane n-type GaN using conductive atomic force microscopy (C-AFM). Current-voltage characteristics obtained by C-AFM showed rectifying properties, indicating nano-scale Schottky junction formation. Two-dimensional current maps revealed that the surface microstructures of GaN influenced transport properties of the junctions.

AB - We investigated the local electrical properties of Pt Schottky contacts to a-plane n-type GaN using conductive atomic force microscopy (C-AFM). Current-voltage characteristics obtained by C-AFM showed rectifying properties, indicating nano-scale Schottky junction formation. Two-dimensional current maps revealed that the surface microstructures of GaN influenced transport properties of the junctions.

KW - Conductive atomic force microscopy

KW - GaN

KW - Schottky junction

UR - https://www.scopus.com/pages/publications/84863045055

U2 - 10.1166/jnn.2011.3396

DO - 10.1166/jnn.2011.3396

M3 - Article

AN - SCOPUS:84863045055

SN - 1533-4880

VL - 11

SP - 1413

EP - 1416

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 2

ER -

Characterization of Pt/a-plane GaN Schottky contacts using conductive atomic force microscopy

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this