Characterization of Si nanowires-based piezoresistive pressure sensor by dynamic cycling test

Liang Lou; Hongkang Yan; Cairan He; Woo Tae Park; Dim Lee Kwong; Chengkuo Lee

doi:10.1109/IPFA.2012.6306318

Characterization of Si nanowires-based piezoresistive pressure sensor by dynamic cycling test

Liang Lou, Hongkang Yan, Cairan He, Woo Tae Park, Dim Lee Kwong, Chengkuo Lee

Dept. of Mechanical & Automotive Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

A novel pressure sensor using piezoresistive silicon nanowires (SiNWs) embedded in the suspended multi-layered diaphragm was investigated by a probe-based dynamic cycling test. Even under compressive strain of 1.5% after 3.6x10 ⁵ cycles, there is no observed drift and degradation in sensor characteristics.

Original language	English
Title of host publication	2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012
DOIs	https://doi.org/10.1109/IPFA.2012.6306318
State	Published - 2012
Event	2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012 - Singapore, Singapore Duration: 2 Jul 2012 → 6 Jul 2012

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012
Country/Territory	Singapore
City	Singapore
Period	2/07/12 → 6/07/12

Keywords

Fatigue
large compressive strain
piezoresistive
pressure sensor
silicon nanowire

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10.1109/IPFA.2012.6306318

Cite this

Lou, L., Yan, H., He, C., Park, W. T., Kwong, D. L., & Lee, C. (2012). Characterization of Si nanowires-based piezoresistive pressure sensor by dynamic cycling test. In 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012 Article 6306318 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2012.6306318

Lou, Liang ; Yan, Hongkang ; He, Cairan et al. / Characterization of Si nanowires-based piezoresistive pressure sensor by dynamic cycling test. 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012. 2012. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{a963eb8bd08a496d9c598613c32260f4,

title = "Characterization of Si nanowires-based piezoresistive pressure sensor by dynamic cycling test",

abstract = "A novel pressure sensor using piezoresistive silicon nanowires (SiNWs) embedded in the suspended multi-layered diaphragm was investigated by a probe-based dynamic cycling test. Even under compressive strain of 1.5\% after 3.6x10 5 cycles, there is no observed drift and degradation in sensor characteristics.",

keywords = "Fatigue, large compressive strain, piezoresistive, pressure sensor, silicon nanowire",

author = "Liang Lou and Hongkang Yan and Cairan He and Park, \{Woo Tae\} and Kwong, \{Dim Lee\} and Chengkuo Lee",

year = "2012",

doi = "10.1109/IPFA.2012.6306318",

language = "English",

isbn = "9781467309806",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

booktitle = "2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012",

note = "2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012 ; Conference date: 02-07-2012 Through 06-07-2012",

}

Lou, L, Yan, H, He, C, Park, WT, Kwong, DL & Lee, C 2012, Characterization of Si nanowires-based piezoresistive pressure sensor by dynamic cycling test. in 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012., 6306318, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012, Singapore, Singapore, 2/07/12. https://doi.org/10.1109/IPFA.2012.6306318

Characterization of Si nanowires-based piezoresistive pressure sensor by dynamic cycling test. / Lou, Liang; Yan, Hongkang; He, Cairan et al.
2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012. 2012. 6306318 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Characterization of Si nanowires-based piezoresistive pressure sensor by dynamic cycling test

AU - Lou, Liang

AU - Yan, Hongkang

AU - He, Cairan

AU - Park, Woo Tae

AU - Kwong, Dim Lee

AU - Lee, Chengkuo

PY - 2012

Y1 - 2012

N2 - A novel pressure sensor using piezoresistive silicon nanowires (SiNWs) embedded in the suspended multi-layered diaphragm was investigated by a probe-based dynamic cycling test. Even under compressive strain of 1.5% after 3.6x10 5 cycles, there is no observed drift and degradation in sensor characteristics.

AB - A novel pressure sensor using piezoresistive silicon nanowires (SiNWs) embedded in the suspended multi-layered diaphragm was investigated by a probe-based dynamic cycling test. Even under compressive strain of 1.5% after 3.6x10 5 cycles, there is no observed drift and degradation in sensor characteristics.

KW - Fatigue

KW - large compressive strain

KW - piezoresistive

KW - pressure sensor

KW - silicon nanowire

UR - https://www.scopus.com/pages/publications/84869025965

U2 - 10.1109/IPFA.2012.6306318

DO - 10.1109/IPFA.2012.6306318

M3 - Conference contribution

AN - SCOPUS:84869025965

SN - 9781467309806

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

BT - 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012

T2 - 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012

Y2 - 2 July 2012 through 6 July 2012

ER -

Lou L, Yan H, He C, Park WT, Kwong DL, Lee C. Characterization of Si nanowires-based piezoresistive pressure sensor by dynamic cycling test. In 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012. 2012. 6306318. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2012.6306318

Characterization of Si nanowires-based piezoresistive pressure sensor by dynamic cycling test

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