Chemical interaction and ligand exchange between a [(CH3)3Si]3Sb precursor and atomic layer deposited Sb2Te3 films

Taeyong Eom; Taehong Gwon; Sijung Yoo; Byung Joon Choi; Moo Sung Kim; Sergei Ivanov; Andrew Adamczyk; Iain Buchanan; Manchao Xiao; Cheol Seong Hwang

doi:10.1039/c4tc02688h

Chemical interaction and ligand exchange between a [(CH₃)₃Si]₃Sb precursor and atomic layer deposited Sb₂Te₃ films

Taeyong Eom, Taehong Gwon, Sijung Yoo, Byung Joon Choi, Moo Sung Kim, Sergei Ivanov, Andrew Adamczyk, Iain Buchanan, Manchao Xiao, Cheol Seong Hwang

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The chemical interaction between the [(CH₃)₃Si]₃Sb precursor and atomic layer deposited Sb₂Te₃ thin films was examined at temperatures ranging from 70 to 220 °C. The trimethylsilyl group [(CH₃)₃Si] displays greater affinity for Te than for Sb, and this drives replacement of Te in the film with Sb from the [(CH₃)₃Si]₃Sb precursor, while eliminating volatile [(CH₃)₃Si]₂Te, especially at elevated temperatures. The compositions of the resulting Sb-Te layers lie on the Sb₂Te₃-Sb tie line. The incorporation behavior of [(CH₃)₃Si]₃Sb was explained in terms of a Lewis acid-base reaction. The exchange reactions occurred to relieve the unfavorable hard-soft Lewis acid-base pair between the trimethylsilyl group and Sb in [(CH₃)₃Si]₃Sb. Such a reaction could be usefully adopted to control the chemical composition of ternary Ge-Sb-Te thin films.

Original language	English
Pages (from-to)	1365-1370
Number of pages	6
Journal	Journal of Materials Chemistry C
Volume	3
Issue number	6
DOIs	https://doi.org/10.1039/c4tc02688h
State	Published - 14 Feb 2015

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title = "Chemical interaction and ligand exchange between a [(CH3)3Si]3Sb precursor and atomic layer deposited Sb2Te3 films",

abstract = "The chemical interaction between the [(CH3)3Si]3Sb precursor and atomic layer deposited Sb2Te3 thin films was examined at temperatures ranging from 70 to 220 °C. The trimethylsilyl group [(CH3)3Si] displays greater affinity for Te than for Sb, and this drives replacement of Te in the film with Sb from the [(CH3)3Si]3Sb precursor, while eliminating volatile [(CH3)3Si]2Te, especially at elevated temperatures. The compositions of the resulting Sb-Te layers lie on the Sb2Te3-Sb tie line. The incorporation behavior of [(CH3)3Si]3Sb was explained in terms of a Lewis acid-base reaction. The exchange reactions occurred to relieve the unfavorable hard-soft Lewis acid-base pair between the trimethylsilyl group and Sb in [(CH3)3Si]3Sb. Such a reaction could be usefully adopted to control the chemical composition of ternary Ge-Sb-Te thin films.",

author = "Taeyong Eom and Taehong Gwon and Sijung Yoo and Choi, \{Byung Joon\} and Kim, \{Moo Sung\} and Sergei Ivanov and Andrew Adamczyk and Iain Buchanan and Manchao Xiao and Hwang, \{Cheol Seong\}",

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year = "2015",

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day = "14",

doi = "10.1039/c4tc02688h",

language = "English",

volume = "3",

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T1 - Chemical interaction and ligand exchange between a [(CH3)3Si]3Sb precursor and atomic layer deposited Sb2Te3 films

AU - Eom, Taeyong

AU - Gwon, Taehong

AU - Yoo, Sijung

AU - Choi, Byung Joon

AU - Kim, Moo Sung

AU - Ivanov, Sergei

AU - Adamczyk, Andrew

AU - Buchanan, Iain

AU - Xiao, Manchao

AU - Hwang, Cheol Seong

PY - 2015/2/14

Y1 - 2015/2/14

N2 - The chemical interaction between the [(CH3)3Si]3Sb precursor and atomic layer deposited Sb2Te3 thin films was examined at temperatures ranging from 70 to 220 °C. The trimethylsilyl group [(CH3)3Si] displays greater affinity for Te than for Sb, and this drives replacement of Te in the film with Sb from the [(CH3)3Si]3Sb precursor, while eliminating volatile [(CH3)3Si]2Te, especially at elevated temperatures. The compositions of the resulting Sb-Te layers lie on the Sb2Te3-Sb tie line. The incorporation behavior of [(CH3)3Si]3Sb was explained in terms of a Lewis acid-base reaction. The exchange reactions occurred to relieve the unfavorable hard-soft Lewis acid-base pair between the trimethylsilyl group and Sb in [(CH3)3Si]3Sb. Such a reaction could be usefully adopted to control the chemical composition of ternary Ge-Sb-Te thin films.

AB - The chemical interaction between the [(CH3)3Si]3Sb precursor and atomic layer deposited Sb2Te3 thin films was examined at temperatures ranging from 70 to 220 °C. The trimethylsilyl group [(CH3)3Si] displays greater affinity for Te than for Sb, and this drives replacement of Te in the film with Sb from the [(CH3)3Si]3Sb precursor, while eliminating volatile [(CH3)3Si]2Te, especially at elevated temperatures. The compositions of the resulting Sb-Te layers lie on the Sb2Te3-Sb tie line. The incorporation behavior of [(CH3)3Si]3Sb was explained in terms of a Lewis acid-base reaction. The exchange reactions occurred to relieve the unfavorable hard-soft Lewis acid-base pair between the trimethylsilyl group and Sb in [(CH3)3Si]3Sb. Such a reaction could be usefully adopted to control the chemical composition of ternary Ge-Sb-Te thin films.

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U2 - 10.1039/c4tc02688h

DO - 10.1039/c4tc02688h

M3 - Article

AN - SCOPUS:84922453784

SN - 2050-7534

VL - 3

SP - 1365

EP - 1370

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 6

ER -

Chemical interaction and ligand exchange between a [(CH₃)₃Si]₃Sb precursor and atomic layer deposited Sb₂Te₃ films

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