Chemical vapor deposition of Ru thin films with an enhanced morphology, thermal stability, and electrical properties using a RuO4 precursor

Jeong Hwan Han; Sang Woon Lee; Gyu Jin Choi; Sang Young Lee; Cheol Seong Hwang; Christian Dussarrat; Julien Gatineau

doi:10.1021/cm802485r

Chemical vapor deposition of Ru thin films with an enhanced morphology, thermal stability, and electrical properties using a RuO4 precursor

Jeong Hwan Han, Sang Woon Lee, Gyu Jin Choi, Sang Young Lee, Cheol Seong Hwang, Christian Dussarrat, Julien Gatineau

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

65 Scopus citations

Abstract

A study used a RuO₄ precursor to investigate chemical vapor deposition of Ru thin films with enhanced morphology, thermal stability, and electrical properties. The investigation was conducted at growth temperatures ranging between 190-350 °C and it was observed that the precursor decomposed thermally at all temperatures. The RuO₄ precursor was dissolved in an ethyl-methyl-fluorinated solvent mixture that had similar vapor pressure to that of the precursor. It was demonstrated that the use of solvent elevated the safety concern of pure RuO₄ precursor and helped in properly controlling the growth process. The film thickness was measured by field-emission scanning electron microscopy (FESEM) and X-ray reflectivity (XRR). The area density of the Ru film was measured by X-ray fluorescence spectroscopy (XRF), while its bulk density was investigated by XRR.

Original language	English
Pages (from-to)	207-209
Number of pages	3
Journal	Chemistry of Materials
Volume	21
Issue number	2
DOIs	https://doi.org/10.1021/cm802485r
State	Published - 27 Jan 2009

Access to Document

10.1021/cm802485r

Cite this

@article{7aa07cc4f76d4895883907002c30d9e0,

title = "Chemical vapor deposition of Ru thin films with an enhanced morphology, thermal stability, and electrical properties using a RuO4 precursor",

abstract = "A study used a RuO4 precursor to investigate chemical vapor deposition of Ru thin films with enhanced morphology, thermal stability, and electrical properties. The investigation was conducted at growth temperatures ranging between 190-350 °C and it was observed that the precursor decomposed thermally at all temperatures. The RuO4 precursor was dissolved in an ethyl-methyl-fluorinated solvent mixture that had similar vapor pressure to that of the precursor. It was demonstrated that the use of solvent elevated the safety concern of pure RuO4 precursor and helped in properly controlling the growth process. The film thickness was measured by field-emission scanning electron microscopy (FESEM) and X-ray reflectivity (XRR). The area density of the Ru film was measured by X-ray fluorescence spectroscopy (XRF), while its bulk density was investigated by XRR.",

author = "Han, \{Jeong Hwan\} and Lee, \{Sang Woon\} and Choi, \{Gyu Jin\} and Lee, \{Sang Young\} and Hwang, \{Cheol Seong\} and Christian Dussarrat and Julien Gatineau",

year = "2009",

month = jan,

day = "27",

doi = "10.1021/cm802485r",

language = "English",

volume = "21",

pages = "207--209",

journal = "Chemistry of Materials",

issn = "0897-4756",

number = "2",

}

TY - JOUR

T1 - Chemical vapor deposition of Ru thin films with an enhanced morphology, thermal stability, and electrical properties using a RuO4 precursor

AU - Han, Jeong Hwan

AU - Lee, Sang Woon

AU - Choi, Gyu Jin

AU - Lee, Sang Young

AU - Hwang, Cheol Seong

AU - Dussarrat, Christian

AU - Gatineau, Julien

PY - 2009/1/27

Y1 - 2009/1/27

N2 - A study used a RuO4 precursor to investigate chemical vapor deposition of Ru thin films with enhanced morphology, thermal stability, and electrical properties. The investigation was conducted at growth temperatures ranging between 190-350 °C and it was observed that the precursor decomposed thermally at all temperatures. The RuO4 precursor was dissolved in an ethyl-methyl-fluorinated solvent mixture that had similar vapor pressure to that of the precursor. It was demonstrated that the use of solvent elevated the safety concern of pure RuO4 precursor and helped in properly controlling the growth process. The film thickness was measured by field-emission scanning electron microscopy (FESEM) and X-ray reflectivity (XRR). The area density of the Ru film was measured by X-ray fluorescence spectroscopy (XRF), while its bulk density was investigated by XRR.

AB - A study used a RuO4 precursor to investigate chemical vapor deposition of Ru thin films with enhanced morphology, thermal stability, and electrical properties. The investigation was conducted at growth temperatures ranging between 190-350 °C and it was observed that the precursor decomposed thermally at all temperatures. The RuO4 precursor was dissolved in an ethyl-methyl-fluorinated solvent mixture that had similar vapor pressure to that of the precursor. It was demonstrated that the use of solvent elevated the safety concern of pure RuO4 precursor and helped in properly controlling the growth process. The film thickness was measured by field-emission scanning electron microscopy (FESEM) and X-ray reflectivity (XRR). The area density of the Ru film was measured by X-ray fluorescence spectroscopy (XRF), while its bulk density was investigated by XRR.

UR - http://www.scopus.com/inward/record.url?scp=61849111633&partnerID=8YFLogxK

U2 - 10.1021/cm802485r

DO - 10.1021/cm802485r

M3 - Article

AN - SCOPUS:61849111633

SN - 0897-4756

VL - 21

SP - 207

EP - 209

JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 2

ER -

Chemical vapor deposition of Ru thin films with an enhanced morphology, thermal stability, and electrical properties using a RuO4 precursor

Abstract

Access to Document

Other files and links

Fingerprint

Cite this