@inproceedings{878840519ddd4181af2a57e2f0011764,
title = "CMOS sources and detectors for sub-millimeter wave applications",
abstract = "An integrated chain composed of an 195-GHz oscillator with frequency doubled output at ∼390 GHz followed by two cascaded ÷2 injection locked frequency dividers with output frequency of ∼49 GHz is demonstrated in 45-nm CMOS. The peak power radiated at ∼390 GHz by an on-chip antenna is ∼2 μW. This work indicates it is possible to phase-lock submillimeter wave signals in CMOS. Polysilicon Gate separated Schottky diodes that can be fabricated without any process modifications in a foundry 130-nm CMOS process are utilized to implement 280-GHz and 860-GHz detectors for imaging. A fully-integrated 280-GHz 4×4 imager array exhibits measured NEP of 29pW/Hz1/2 and responsivity of 5.1kV/W (323V/W without the amplifier). The 860-GHz detector without an amplifier achieves responsivity of 273V/W and NEP of 42pW/Hz1/2.",
keywords = "CMOS, Schottky diode, detector, imager, on-chip antenna, phase-lock, source, sub-millimeter wave",
author = "Dongha Shim and Yaming Zhang and Ruonan Han and Kim, \{Dae Yeon\} and Youngwan Kim and Shinwoong Park and Zeshan Ahmad and Seok, \{Eun Young\} and Kenneth, \{K. O.\}",
year = "2013",
doi = "10.1109/APMC.2013.6694848",
language = "English",
isbn = "9781479914746",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
pages = "512--514",
booktitle = "2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013",
note = "2013 3rd Asia-Pacific Microwave Conference, APMC 2013 ; Conference date: 05-11-2013 Through 08-11-2013",
}