Combined ligand exchange and substitution reactions in atomic layer deposition of conformal Ge2Sb2Te5 film for phase change memory application

Taeyong Eom; Taehong Gwon; Sijung Yoo; Byung Joon Choi; Moo Sung Kim; Iain Buchanan; Sergei Ivanov; Manchao Xiao; Cheol Seong Hwang

doi:10.1021/acs.chemmater.5b00805

Combined ligand exchange and substitution reactions in atomic layer deposition of conformal Ge₂Sb₂Te₅ film for phase change memory application

Taeyong Eom, Taehong Gwon, Sijung Yoo, Byung Joon Choi, Moo Sung Kim, Iain Buchanan, Sergei Ivanov, Manchao Xiao, Cheol Seong Hwang

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

For phase change memories application, Ge-Sb-Te films were prepared by a stable and reliable atomic layer deposition (ALD) method. Ge(OC₂H₅)₄, Sb(OC₂H₅)₃, [(CH₃)₃Si]₃Sb, and [(CH₃)₃Si]₂Te were used to deposit various layers with compositions that can be described by combinations of GeTe₂-Sb₂Te layers including Ge₂Sb₂Te₅ at a substrate temperature as low as 70 °C. A shift in composition of Sb-Te films from Sb₂Te₃ to Sb₂Te composition was achieved by combining ligand exchange and substitution reaction between Sb in [(CH₃)₃Si]₃Sb and Te in the Sb₂Te₃ layer. This surface-limited ALD process allowed highly conformal, smooth, and reproducible film growth over a contact hole structure, highlighting the feasibility of phase change memory applications.

Original language	English
Pages (from-to)	3707-3713
Number of pages	7
Journal	Chemistry of Materials
Volume	27
Issue number	10
DOIs	https://doi.org/10.1021/acs.chemmater.5b00805
State	Published - 26 May 2015

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title = "Combined ligand exchange and substitution reactions in atomic layer deposition of conformal Ge2Sb2Te5 film for phase change memory application",

abstract = "For phase change memories application, Ge-Sb-Te films were prepared by a stable and reliable atomic layer deposition (ALD) method. Ge(OC2H5)4, Sb(OC2H5)3, [(CH3)3Si]3Sb, and [(CH3)3Si]2Te were used to deposit various layers with compositions that can be described by combinations of GeTe2-Sb2Te layers including Ge2Sb2Te5 at a substrate temperature as low as 70 °C. A shift in composition of Sb-Te films from Sb2Te3 to Sb2Te composition was achieved by combining ligand exchange and substitution reaction between Sb in [(CH3)3Si]3Sb and Te in the Sb2Te3 layer. This surface-limited ALD process allowed highly conformal, smooth, and reproducible film growth over a contact hole structure, highlighting the feasibility of phase change memory applications.",

author = "Taeyong Eom and Taehong Gwon and Sijung Yoo and Choi, \{Byung Joon\} and Kim, \{Moo Sung\} and Iain Buchanan and Sergei Ivanov and Manchao Xiao and Hwang, \{Cheol Seong\}",

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year = "2015",

month = may,

day = "26",

doi = "10.1021/acs.chemmater.5b00805",

language = "English",

volume = "27",

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journal = "Chemistry of Materials",

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TY - JOUR

T1 - Combined ligand exchange and substitution reactions in atomic layer deposition of conformal Ge2Sb2Te5 film for phase change memory application

AU - Eom, Taeyong

AU - Gwon, Taehong

AU - Yoo, Sijung

AU - Choi, Byung Joon

AU - Kim, Moo Sung

AU - Buchanan, Iain

AU - Ivanov, Sergei

AU - Xiao, Manchao

AU - Hwang, Cheol Seong

PY - 2015/5/26

Y1 - 2015/5/26

N2 - For phase change memories application, Ge-Sb-Te films were prepared by a stable and reliable atomic layer deposition (ALD) method. Ge(OC2H5)4, Sb(OC2H5)3, [(CH3)3Si]3Sb, and [(CH3)3Si]2Te were used to deposit various layers with compositions that can be described by combinations of GeTe2-Sb2Te layers including Ge2Sb2Te5 at a substrate temperature as low as 70 °C. A shift in composition of Sb-Te films from Sb2Te3 to Sb2Te composition was achieved by combining ligand exchange and substitution reaction between Sb in [(CH3)3Si]3Sb and Te in the Sb2Te3 layer. This surface-limited ALD process allowed highly conformal, smooth, and reproducible film growth over a contact hole structure, highlighting the feasibility of phase change memory applications.

AB - For phase change memories application, Ge-Sb-Te films were prepared by a stable and reliable atomic layer deposition (ALD) method. Ge(OC2H5)4, Sb(OC2H5)3, [(CH3)3Si]3Sb, and [(CH3)3Si]2Te were used to deposit various layers with compositions that can be described by combinations of GeTe2-Sb2Te layers including Ge2Sb2Te5 at a substrate temperature as low as 70 °C. A shift in composition of Sb-Te films from Sb2Te3 to Sb2Te composition was achieved by combining ligand exchange and substitution reaction between Sb in [(CH3)3Si]3Sb and Te in the Sb2Te3 layer. This surface-limited ALD process allowed highly conformal, smooth, and reproducible film growth over a contact hole structure, highlighting the feasibility of phase change memory applications.

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U2 - 10.1021/acs.chemmater.5b00805

DO - 10.1021/acs.chemmater.5b00805

M3 - Article

AN - SCOPUS:84930225371

SN - 0897-4756

VL - 27

SP - 3707

EP - 3713

JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 10

ER -

Combined ligand exchange and substitution reactions in atomic layer deposition of conformal Ge₂Sb₂Te₅ film for phase change memory application

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