Combined ligand exchange and substitution reactions in atomic layer deposition of conformal Ge2Sb2Te5 film for phase change memory application

Taeyong Eom; Taehong Gwon; Sijung Yoo; Byung Joon Choi; Moo Sung Kim; Iain Buchanan; Sergei Ivanov; Manchao Xiao; Cheol Seong Hwang

doi:10.1021/acs.chemmater.5b00805

Combined ligand exchange and substitution reactions in atomic layer deposition of conformal Ge₂Sb₂Te₅ film for phase change memory application

Taeyong Eom
, Taehong Gwon
, Sijung Yoo
, Byung Joon Choi
, Moo Sung Kim
, Iain Buchanan
, Sergei Ivanov
, Manchao Xiao
, Cheol Seong Hwang

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

For phase change memories application, Ge-Sb-Te films were prepared by a stable and reliable atomic layer deposition (ALD) method. Ge(OC₂H₅)₄, Sb(OC₂H₅)₃, [(CH₃)₃Si]₃Sb, and [(CH₃)₃Si]₂Te were used to deposit various layers with compositions that can be described by combinations of GeTe₂-Sb₂Te layers including Ge₂Sb₂Te₅ at a substrate temperature as low as 70 °C. A shift in composition of Sb-Te films from Sb₂Te₃ to Sb₂Te composition was achieved by combining ligand exchange and substitution reaction between Sb in [(CH₃)₃Si]₃Sb and Te in the Sb₂Te₃ layer. This surface-limited ALD process allowed highly conformal, smooth, and reproducible film growth over a contact hole structure, highlighting the feasibility of phase change memory applications.

Original language	English
Pages (from-to)	3707-3713
Number of pages	7
Journal	Chemistry of Materials
Volume	27
Issue number	10
DOIs	https://doi.org/10.1021/acs.chemmater.5b00805
State	Published - 26 May 2015

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@article{8593e439c0154fa2b397f187c6abaa50,

title = "Combined ligand exchange and substitution reactions in atomic layer deposition of conformal Ge2Sb2Te5 film for phase change memory application",

abstract = "For phase change memories application, Ge-Sb-Te films were prepared by a stable and reliable atomic layer deposition (ALD) method. Ge(OC2H5)4, Sb(OC2H5)3, [(CH3)3Si]3Sb, and [(CH3)3Si]2Te were used to deposit various layers with compositions that can be described by combinations of GeTe2-Sb2Te layers including Ge2Sb2Te5 at a substrate temperature as low as 70 °C. A shift in composition of Sb-Te films from Sb2Te3 to Sb2Te composition was achieved by combining ligand exchange and substitution reaction between Sb in [(CH3)3Si]3Sb and Te in the Sb2Te3 layer. This surface-limited ALD process allowed highly conformal, smooth, and reproducible film growth over a contact hole structure, highlighting the feasibility of phase change memory applications.",

author = "Taeyong Eom and Taehong Gwon and Sijung Yoo and Choi, \{Byung Joon\} and Kim, \{Moo Sung\} and Iain Buchanan and Sergei Ivanov and Manchao Xiao and Hwang, \{Cheol Seong\}",

note = "Publisher Copyright: {\textcopyright} 2015 American Chemical Society.",

year = "2015",

month = may,

day = "26",

doi = "10.1021/acs.chemmater.5b00805",

language = "English",

volume = "27",

pages = "3707--3713",

journal = "Chemistry of Materials",

issn = "0897-4756",

number = "10",

}

TY - JOUR

T1 - Combined ligand exchange and substitution reactions in atomic layer deposition of conformal Ge2Sb2Te5 film for phase change memory application

AU - Eom, Taeyong

AU - Gwon, Taehong

AU - Yoo, Sijung

AU - Choi, Byung Joon

AU - Kim, Moo Sung

AU - Buchanan, Iain

AU - Ivanov, Sergei

AU - Xiao, Manchao

AU - Hwang, Cheol Seong

PY - 2015/5/26

Y1 - 2015/5/26

N2 - For phase change memories application, Ge-Sb-Te films were prepared by a stable and reliable atomic layer deposition (ALD) method. Ge(OC2H5)4, Sb(OC2H5)3, [(CH3)3Si]3Sb, and [(CH3)3Si]2Te were used to deposit various layers with compositions that can be described by combinations of GeTe2-Sb2Te layers including Ge2Sb2Te5 at a substrate temperature as low as 70 °C. A shift in composition of Sb-Te films from Sb2Te3 to Sb2Te composition was achieved by combining ligand exchange and substitution reaction between Sb in [(CH3)3Si]3Sb and Te in the Sb2Te3 layer. This surface-limited ALD process allowed highly conformal, smooth, and reproducible film growth over a contact hole structure, highlighting the feasibility of phase change memory applications.

AB - For phase change memories application, Ge-Sb-Te films were prepared by a stable and reliable atomic layer deposition (ALD) method. Ge(OC2H5)4, Sb(OC2H5)3, [(CH3)3Si]3Sb, and [(CH3)3Si]2Te were used to deposit various layers with compositions that can be described by combinations of GeTe2-Sb2Te layers including Ge2Sb2Te5 at a substrate temperature as low as 70 °C. A shift in composition of Sb-Te films from Sb2Te3 to Sb2Te composition was achieved by combining ligand exchange and substitution reaction between Sb in [(CH3)3Si]3Sb and Te in the Sb2Te3 layer. This surface-limited ALD process allowed highly conformal, smooth, and reproducible film growth over a contact hole structure, highlighting the feasibility of phase change memory applications.

UR - https://www.scopus.com/pages/publications/84930225371

U2 - 10.1021/acs.chemmater.5b00805

DO - 10.1021/acs.chemmater.5b00805

M3 - Article

AN - SCOPUS:84930225371

SN - 0897-4756

VL - 27

SP - 3707

EP - 3713

JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 10

ER -

Combined ligand exchange and substitution reactions in atomic layer deposition of conformal Ge₂Sb₂Te₅ film for phase change memory application

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