Comparative investigation of InGaP/InGaAs/Ge triple-junction solar cells using different Te-doped InGaP layers in tunnel junctions

Sang Hyun Jung; Chang Zoo Kim; Youngjo Kim; Dong Hwan Jun; Ho Kwan Kang; Hogyoung Kim

doi:10.3938/jkps.68.792

Comparative investigation of InGaP/InGaAs/Ge triple-junction solar cells using different Te-doped InGaP layers in tunnel junctions

Sang Hyun Jung
, Chang Zoo Kim
, Youngjo Kim
, Dong Hwan Jun
, Ho Kwan Kang
, Hogyoung Kim

Dept. of Optometry

Korea Advanced Nano Fab Center

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Heavily tellurium (Te)-doped InGaP layers in tunnel junctions (TJs) grown by using metalorganic chemical vapor deposition (MOCVD) were investigated to improve the device performance of InGaP/InGaAs/Ge triple-junction solar cells. Three different doping techniques were employed to grow the Te-doped InGaP layers in the TJ; Te doping, Te and Si co-doping and Te pre-doping. Compared to other samples, the external quantum efficiency (EQE) profiles in the InGaP top cell were found to be higher for the sample with Te pre-doping. Under a concentrated light condition, higher fill factor (FF) and conversion efficiency were also observed for the sample with Te pre-doping. These indicate that the crystalline qualities of the upper TJ, composed of a p-GaAs/n-InGaP TJ, and the InGaP top cell were improved by using the Te pre-doping method.

Original language	English
Pages (from-to)	792-796
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	68
Issue number	6
DOIs	https://doi.org/10.3938/jkps.68.792
State	Published - 1 Mar 2016

Keywords

Conversion efficiency
Pre-doping
Tellurium
Tunnel junction

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.3938/jkps.68.792

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@article{86790ee1d45e45489c90411dc752d564,

title = "Comparative investigation of InGaP/InGaAs/Ge triple-junction solar cells using different Te-doped InGaP layers in tunnel junctions",

abstract = "Heavily tellurium (Te)-doped InGaP layers in tunnel junctions (TJs) grown by using metalorganic chemical vapor deposition (MOCVD) were investigated to improve the device performance of InGaP/InGaAs/Ge triple-junction solar cells. Three different doping techniques were employed to grow the Te-doped InGaP layers in the TJ; Te doping, Te and Si co-doping and Te pre-doping. Compared to other samples, the external quantum efficiency (EQE) profiles in the InGaP top cell were found to be higher for the sample with Te pre-doping. Under a concentrated light condition, higher fill factor (FF) and conversion efficiency were also observed for the sample with Te pre-doping. These indicate that the crystalline qualities of the upper TJ, composed of a p-GaAs/n-InGaP TJ, and the InGaP top cell were improved by using the Te pre-doping method.",

keywords = "Conversion efficiency, Pre-doping, Tellurium, Tunnel junction",

author = "Jung, \{Sang Hyun\} and Kim, \{Chang Zoo\} and Youngjo Kim and Jun, \{Dong Hwan\} and Kang, \{Ho Kwan\} and Hogyoung Kim",

note = "Publisher Copyright: {\textcopyright} 2016, The Korean Physical Society.",

year = "2016",

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doi = "10.3938/jkps.68.792",

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volume = "68",

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T1 - Comparative investigation of InGaP/InGaAs/Ge triple-junction solar cells using different Te-doped InGaP layers in tunnel junctions

AU - Jung, Sang Hyun

AU - Kim, Chang Zoo

AU - Kim, Youngjo

AU - Jun, Dong Hwan

AU - Kang, Ho Kwan

AU - Kim, Hogyoung

PY - 2016/3/1

Y1 - 2016/3/1

N2 - Heavily tellurium (Te)-doped InGaP layers in tunnel junctions (TJs) grown by using metalorganic chemical vapor deposition (MOCVD) were investigated to improve the device performance of InGaP/InGaAs/Ge triple-junction solar cells. Three different doping techniques were employed to grow the Te-doped InGaP layers in the TJ; Te doping, Te and Si co-doping and Te pre-doping. Compared to other samples, the external quantum efficiency (EQE) profiles in the InGaP top cell were found to be higher for the sample with Te pre-doping. Under a concentrated light condition, higher fill factor (FF) and conversion efficiency were also observed for the sample with Te pre-doping. These indicate that the crystalline qualities of the upper TJ, composed of a p-GaAs/n-InGaP TJ, and the InGaP top cell were improved by using the Te pre-doping method.

AB - Heavily tellurium (Te)-doped InGaP layers in tunnel junctions (TJs) grown by using metalorganic chemical vapor deposition (MOCVD) were investigated to improve the device performance of InGaP/InGaAs/Ge triple-junction solar cells. Three different doping techniques were employed to grow the Te-doped InGaP layers in the TJ; Te doping, Te and Si co-doping and Te pre-doping. Compared to other samples, the external quantum efficiency (EQE) profiles in the InGaP top cell were found to be higher for the sample with Te pre-doping. Under a concentrated light condition, higher fill factor (FF) and conversion efficiency were also observed for the sample with Te pre-doping. These indicate that the crystalline qualities of the upper TJ, composed of a p-GaAs/n-InGaP TJ, and the InGaP top cell were improved by using the Te pre-doping method.

KW - Conversion efficiency

KW - Pre-doping

KW - Tellurium

KW - Tunnel junction

UR - https://www.scopus.com/pages/publications/84962788941

U2 - 10.3938/jkps.68.792

DO - 10.3938/jkps.68.792

M3 - Article

AN - SCOPUS:84962788941

SN - 0374-4884

VL - 68

SP - 792

EP - 796

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 6

ER -

Comparative investigation of InGaP/InGaAs/Ge triple-junction solar cells using different Te-doped InGaP layers in tunnel junctions

Abstract

Keywords

UN SDGs

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