Comparative study of nitrogen incorporated SnO₂ deposited by sputtering of Sn and SnO₂ targets

Nitrogen-incorporated SnO₂ thin films were deposited by rf magnetron sputtering. Comparative structural, electrical and optical studies of thin films deposited by sputtering of the Sn metallic target and sputtering of the SnO₂ ceramic target were conducted. The SnO₂ thin films deposited by sputtering of the Sn metallic target had a higher electrical conductivity due to a higher carrier concentration than those by sputtering of the SnO₂ ceramic target. Structurally the SnO₂ thin films deposited by sputtering of the SnO₂ ceramic target had a better crystallinity and a larger grain size. This study confirmed that there were distinct and clear differences in electrical, structural, and optical characteristics between SnO₂ thin films deposited by reactive sputtering of the Sn metallic target and by direct sputtering of the SnO ₂ ceramic target.