TY - GEN
T1 - Compute-in-Memory
T2 - 51st IEEE European Solid-State Device Research Conference, ESSDERC 2021
AU - Yu, Shimeng
AU - Shim, Wonbo
AU - Hur, Jae
AU - Luo, Yuan Chun
AU - Choe, Gihun
AU - Li, Wantong
AU - Lu, Anni
AU - Peng, Xiaochen
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021
Y1 - 2021
N2 - Compute-in-memory (CIM) hardware accelerator has been emerged as a promising paradigm for executing the artificial intelligence (AI) tasks owing to its superior energy efficiency. In this keynote presentation, we survey recent progresses of CIM technologies from device-level demonstration to system-level benchmark. First, the ferroelectric devices (FeM-FinFET., ferroelectric non-volatile capacitor) are introduced for resistive and capacitive read-out mechanism for crossbar arrays. Second, resistive random access memory (RRAM) based CIM macro has been taped-out into prototype chips in commercial foundry process and the related NeuroSim validation with measured silicon data is shown. Last, heterogeneous 3D integration scheme for SRAM, RRAM and 3D NAND tiers and logic tier is proposed.
AB - Compute-in-memory (CIM) hardware accelerator has been emerged as a promising paradigm for executing the artificial intelligence (AI) tasks owing to its superior energy efficiency. In this keynote presentation, we survey recent progresses of CIM technologies from device-level demonstration to system-level benchmark. First, the ferroelectric devices (FeM-FinFET., ferroelectric non-volatile capacitor) are introduced for resistive and capacitive read-out mechanism for crossbar arrays. Second, resistive random access memory (RRAM) based CIM macro has been taped-out into prototype chips in commercial foundry process and the related NeuroSim validation with measured silicon data is shown. Last, heterogeneous 3D integration scheme for SRAM, RRAM and 3D NAND tiers and logic tier is proposed.
KW - compute-in-memory
KW - ferroelectric device
KW - hardware accelerator
KW - heterogeneous 3D integration
KW - resistive random access memory (RRAM)
UR - http://www.scopus.com/inward/record.url?scp=85123396893&partnerID=8YFLogxK
U2 - 10.1109/ESSDERC53440.2021.9631765
DO - 10.1109/ESSDERC53440.2021.9631765
M3 - Conference contribution
AN - SCOPUS:85123396893
T3 - European Solid-State Device Research Conference
SP - 21
EP - 28
BT - ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference, Proceedings
PB - Editions Frontieres
Y2 - 6 September 2021 through 9 September 2021
ER -
