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Concealable and Bit Error-Free Breakdown-Based Physical Unclonable Functions Using Magnetic Tunnel Junctions

  • Kyung Min Lee
  • , Ryun Han Koo
  • , Munhyeon Kim
  • , Joon Hwang
  • , Jae Joon Kim
  • , Jong Ho Lee
  • Seoul National University
  • Samsung

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This work is the first to demonstrate a concealable breakdown-based physically unclonable function (PUF) using magnetic tunnel junctions (MTJs), referred to as MBD-PUF, using a fabricated 64×64 2T2R MRAM macro. PUF responses are formed by pulse-controlled breakdown with a target probability, where breakdown (BD) and non-breakdown (n-BD) cells represent '1' and '0', respectively. By leveraging the memory state of n-BD cells, the response can be concealed to enhance security. The responses exhibit near-ideal randomness metrics and maintain bit-error-free readout under 10k repeated accesses and 1k conceal-reveal cycles, both at 125oC. Device-level characterization was performed to understand BD-related behaviors, including soft BD and resistance shifts. A strong PUF architecture using these responses as entropy sources is also proposed, with ML- and rank-based attack resistance. The design is compatible with commercial MRAM/OTP platforms, enabling secure and scalable hardware integration.

Original languageEnglish
Title of host publication2025 IEEE International Electron Devices Meeting, IEDM 2025
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798331567859
DOIs
StatePublished - 2025
Event2025 IEEE International Electron Devices Meeting, IEDM 2025 - San Francisco, United States
Duration: 6 Dec 202510 Dec 2025

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2025 IEEE International Electron Devices Meeting, IEDM 2025
Country/TerritoryUnited States
CitySan Francisco
Period6/12/2510/12/25

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