TY - JOUR
T1 - Cubic-structured HfLaO for the blocking layer of a charge-trap type flash memory device
AU - Park, Jong Kyung
AU - Park, Youngmin
AU - Song, Myeong Ho
AU - Lim, Sung Kyu
AU - Oh, Jae Sub
AU - Joo, Moon Sig
AU - Hong, Kwon
AU - Cho, Byung Jin
PY - 2010/9
Y1 - 2010/9
N2 - Cubic-structured HfLaO with a high κ-value of 30-40 is used for the blocking layer in a charge-trap type memory device. Compared to an Al 2O3 blocking layer, the single HfLaO blocking layer shows lower leakage current, faster program speed, larger memory window, and greater robustness at high voltage, but inferior charge retention due to lower conduction band offset (CBO). When an Al2O3 layer is inserted between the HfLaO and the charge trap layers, good charge retention, even at 150 °C, is achieved, maintaining the advantages of HfLaO.
AB - Cubic-structured HfLaO with a high κ-value of 30-40 is used for the blocking layer in a charge-trap type memory device. Compared to an Al 2O3 blocking layer, the single HfLaO blocking layer shows lower leakage current, faster program speed, larger memory window, and greater robustness at high voltage, but inferior charge retention due to lower conduction band offset (CBO). When an Al2O3 layer is inserted between the HfLaO and the charge trap layers, good charge retention, even at 150 °C, is achieved, maintaining the advantages of HfLaO.
UR - http://www.scopus.com/inward/record.url?scp=77956740748&partnerID=8YFLogxK
U2 - 10.1143/APEX.3.091501
DO - 10.1143/APEX.3.091501
M3 - Article
AN - SCOPUS:77956740748
SN - 1882-0778
VL - 3
JO - Applied Physics Express
JF - Applied Physics Express
IS - 9
M1 - 091501
ER -