Cyclic PECVD of Ge2Sb2Te5films using metallorganic sources

Byung Joon Choi; Seol Choi; Yong Cheol Shin; Cheol Seong Hwang; Jin Wook Lee; Jaehack Jeong; Yoon Jung Kim; Sung Yeon Hwang; Suk Kyoung Hong

doi:10.1149/1.2456199

Cyclic PECVD of Ge₂Sb₂Te₅films using metallorganic sources

Byung Joon Choi, Seol Choi, Yong Cheol Shin, Cheol Seong Hwang, Jin Wook Lee, Jaehack Jeong, Yoon Jung Kim, Sung Yeon Hwang, Suk Kyoung Hong

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

68 Scopus citations

Abstract

Ge2 Sb2 Te5 (GST) thin films were deposited on SiO2 Si and TiNSi substrates by cyclic metallorganic chemical vapor deposition using Ge(i- C4 H9) 4, Sb(i- C3 H7) 3, Te(i- C3 H7) 2 as Ge, Sb, and Te precursors, respectively, with the help of Ar+ H2 plasma at temperatures ranging from 180 to 290°C. The application of plasma power was essential in obtaining a high growth rate and stoichiometric GST thin films. The chemical composition of the films was properly controlled by the cycling ratio and sequence of each precursor pulse. The stoichiometric films grown at 200°C showed a smooth surface morphology, highest density, and lowest impurity concentration. GST film was selectively grown inside the contact hole having a TiNW plug.

Original language	English
Pages (from-to)	H318-H324
Journal	Journal of the Electrochemical Society
Volume	154
Issue number	4
DOIs	https://doi.org/10.1149/1.2456199
State	Published - 1 Jan 2007

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title = "Cyclic PECVD of Ge2Sb2Te5films using metallorganic sources",

abstract = "Ge2 Sb2 Te5 (GST) thin films were deposited on SiO2 Si and TiNSi substrates by cyclic metallorganic chemical vapor deposition using Ge(i- C4 H9) 4, Sb(i- C3 H7) 3, Te(i- C3 H7) 2 as Ge, Sb, and Te precursors, respectively, with the help of Ar+ H2 plasma at temperatures ranging from 180 to 290°C. The application of plasma power was essential in obtaining a high growth rate and stoichiometric GST thin films. The chemical composition of the films was properly controlled by the cycling ratio and sequence of each precursor pulse. The stoichiometric films grown at 200°C showed a smooth surface morphology, highest density, and lowest impurity concentration. GST film was selectively grown inside the contact hole having a TiNW plug.",

author = "Choi, \{Byung Joon\} and Seol Choi and Shin, \{Yong Cheol\} and Hwang, \{Cheol Seong\} and Lee, \{Jin Wook\} and Jaehack Jeong and Kim, \{Yoon Jung\} and Hwang, \{Sung Yeon\} and Hong, \{Suk Kyoung\}",

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AU - Choi, Byung Joon

AU - Choi, Seol

AU - Shin, Yong Cheol

AU - Hwang, Cheol Seong

AU - Lee, Jin Wook

AU - Jeong, Jaehack

AU - Kim, Yoon Jung

AU - Hwang, Sung Yeon

AU - Hong, Suk Kyoung

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N2 - Ge2 Sb2 Te5 (GST) thin films were deposited on SiO2 Si and TiNSi substrates by cyclic metallorganic chemical vapor deposition using Ge(i- C4 H9) 4, Sb(i- C3 H7) 3, Te(i- C3 H7) 2 as Ge, Sb, and Te precursors, respectively, with the help of Ar+ H2 plasma at temperatures ranging from 180 to 290°C. The application of plasma power was essential in obtaining a high growth rate and stoichiometric GST thin films. The chemical composition of the films was properly controlled by the cycling ratio and sequence of each precursor pulse. The stoichiometric films grown at 200°C showed a smooth surface morphology, highest density, and lowest impurity concentration. GST film was selectively grown inside the contact hole having a TiNW plug.

AB - Ge2 Sb2 Te5 (GST) thin films were deposited on SiO2 Si and TiNSi substrates by cyclic metallorganic chemical vapor deposition using Ge(i- C4 H9) 4, Sb(i- C3 H7) 3, Te(i- C3 H7) 2 as Ge, Sb, and Te precursors, respectively, with the help of Ar+ H2 plasma at temperatures ranging from 180 to 290°C. The application of plasma power was essential in obtaining a high growth rate and stoichiometric GST thin films. The chemical composition of the films was properly controlled by the cycling ratio and sequence of each precursor pulse. The stoichiometric films grown at 200°C showed a smooth surface morphology, highest density, and lowest impurity concentration. GST film was selectively grown inside the contact hole having a TiNW plug.

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Cyclic PECVD of Ge₂Sb₂Te₅films using metallorganic sources

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